Method for preparing centimeter-level multiphase molybdenum disulfide film

Abstract

The invention discloses a method for preparing a centimeter-level multiphase molybdenum disulfide film, and belongs to the technical field of semiconductor material preparation. According to the preparation method, three parts of sulfur powder and one part of molybdenum pentachloride powder are used as a sulfur source and a carbon source, and the set temperature of the second and third parts of elemental sulfur is the same as that of the molybdenum source, so that the evaporation rate of MoCl5 is effectively reduced, the molybdenum source is enabled to slowly evaporate, react and grow in the sulfur atmosphere, the growth of MoS2 small particles can be inhibited, and the uniformity and consistency of the MoS2 film are improved. The unique arrangement mode of the sulfur source and the molybdenum source enables MoS2 to be in a completely over-sulfurized state in the nucleation and continuous film forming process (because the evaporation temperature of MoCl5 is higher than that of S elementary substance), and the whole-course over-sulfurized state enables a 2H phase and a 1T phase to be realized in the same growth process at the same time. According to the preparation method, argon is used as carrier gas, a low-pressure chemical vapor deposition method is adopted, and the multi-phase molybdenum disulfide film is prepared on the heavily-doped p-type SiO2 / Si substrate; the multiphase molybdenum disulfide film prepared by the method has a 2H phase and a 1T phase at the same time.

Description

1. Technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and in particular relates to a method for preparing centimeter-level heterogeneous molybdenum disulfide (MoS) by a low-pressure chemical vapor deposition method. 2 ) thin film method. 2. Background technology [0002] Since the twentieth century, a large number of scientific researchers have devoted themselves to the study of two-dimensional layered materials. The successful preparation of monolayer graphene, a typical representative of two-dimensional layered materials, provides new possibilities for the study of other two-dimensional layered materials. Two-dimensional transition metal dichalcogenides (TMDCs) materials themselves have strong intramolecular bonds and weak interlayer bonds. The weak interlayer bonds and extremely strong intramolecular bonds lead to a layered structure, and at the same time, exhibit an isotropic opposite sex. Due to the existence of...

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Problems solved by technology

[0004] Current multiphase MoS with coexistence of 2H and 1T phases 2 The preparation is more concentrated on the powder, large-area single-layer multi-phase MoS 2 There are still challenges in the preparation of heterogeneous MoS 2 The preparation of more is to prepare the 2H phase first and then perform phase transition (such as using lithium ion intercalation), the process is complicated, so large-area single-layer multi-phase MoS 2 The study of controllable devices is of great significance both in basic research and in practical applications

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