Solar silicon wafer cleaning agent
A technology of solar silicon wafers and cleaning agents, applied in detergent compounding agents, detergent compositions, organic cleaning compositions, etc., can solve the problems of odor stimulation, easy volatilization, and insufficient durability of cleaning agents, etc., and achieve biodegradable performance Excellent cleaning ability, long-lasting and durable, biodegradable performance, low toxicity and low stimulation effect
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Embodiment 1
[0039] 5wt% of secondary isomeric alcohol polyoxyethylene ether, 2.5wt% of fatty alcohol sulfate, 5wt% of propylene glycol methyl ether, 10wt% of sodium hydroxide, 0.5wt% of ethylenediaminetetraacetic acid tetrasodium salt and The remaining water is evenly mixed to obtain a solar silicon wafer cleaning agent. When cleaning solar silicon wafers, the cleaning agent and water are formulated into a solution with a mass ratio of 1:20, and placed in an ultrasonic cleaning tank at 55°C to clean the silicon wafers.
Embodiment 2
[0041] 7.5wt% of secondary isomeric alcohol polyoxyethylene ether, 2.5wt% of fatty alcohol polyoxyethylene ether sulfate, 5wt% of propylene glycol dimethyl ether, 10wt% of triethanolamine, 1wt% of ethylenediaminetetraacetic acid The tetrasodium salt and the remaining water are mixed uniformly to obtain a solar silicon wafer cleaning agent. When cleaning solar silicon wafers, the cleaning agent and water are formulated into a solution with a mass ratio of 1:40, and placed in an ultrasonic cleaning tank at 50°C to clean the silicon wafers.
Embodiment 3
[0043] 10wt% of secondary isomeric alcohol polyoxyethylene ether, 1wt% of fatty alcohol polyoxyethylene ether carboxylate, 10wt% of dipropylene glycol methyl ether, 10wt% of sodium silicate, 10wt% of sodium hydroxide, 3wt% % Ethylenediaminetetraacetic acid tetrasodium salt and the remaining water are mixed uniformly to obtain a solar silicon wafer cleaning agent. When cleaning solar silicon wafers, the cleaning agent and water are formulated into a solution with a mass ratio of 1:50, and placed in an ultrasonic cleaning tank at 60°C to clean the silicon wafers.
[0044] The cleaning agent prepared by the present invention is alkaline, the cleaning rate is above 99%, the surface of the silicon wafer after cleaning is clean, the color is consistent, and there is no variegation. Compared with the cleaning agent of the prior art, the cleaning agent of the present invention cleans the silicon wafer The number increased by 30%.
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