Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar silicon wafer cleaning agent

A technology for solar silicon wafers and cleaning agents, applied in detergent compounding agents, detergent compositions, organic cleaning compositions, etc., can solve the problems of insufficient cleaning agent performance, irritating odor, and easy volatility, etc., and achieve biodegradable performance Low toxicity and low irritation, good biodegradability, and long-lasting cleaning ability

Active Publication Date: 2015-01-28
ZHEJIANG SHUNLIAN INTELLIGENT EQUIP CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The solvents of the above two cleaning agents are volatile organic solvents, which are more volatile when used at 60~70°C, causing certain odor irritation, and also make the performance of the cleaning agent not durable enough

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] 5wt% secondary isomeric alcohol polyoxyethylene ether, 2.5wt% fatty alcohol sulfate, 5wt% propylene glycol methyl ether, 10wt% sodium hydroxide, 0.5wt% edetate tetrasodium salt and The rest of the water is evenly mixed to obtain a solar silicon wafer cleaning agent. When cleaning solar silicon wafers, the cleaning agent and water are prepared into a solution at a mass ratio of 1:20, and placed in an ultrasonic cleaning tank at 55°C to clean the silicon wafers.

Embodiment 2

[0041]7.5wt% secondary isomeric alcohol polyoxyethylene ether, 2.5wt% fatty alcohol polyoxyethylene ether sulfate, 5wt% propylene glycol dimethyl ether, 10wt% triethanolamine, 1wt% ethylenediaminetetraacetic acid The tetrasodium salt and the remaining water are evenly mixed to obtain a cleaning agent for solar silicon wafers. When cleaning solar silicon wafers, the cleaning agent and water are prepared into a solution at a mass ratio of 1:40, and placed in a 50°C ultrasonic cleaning tank to clean the silicon wafers.

Embodiment 3

[0043] 10wt% secondary isomerism alcohol polyoxyethylene ether, 1wt% fatty alcohol polyoxyethylene ether carboxylate, 10wt% dipropylene glycol methyl ether, 10wt% sodium silicate, 10wt% sodium hydroxide, 3wt% % ethylenediaminetetraacetic acid tetrasodium salt and the rest of the water are uniformly mixed to obtain a solar silicon wafer cleaning agent. When cleaning solar silicon wafers, the cleaning agent and water are prepared into a solution at a mass ratio of 1:50, and placed in a 60°C ultrasonic cleaning tank to clean the silicon wafers.

[0044] The cleaning agent prepared by the present invention is alkaline, and the cleaning rate is more than 99%. The surface of the silicon chip after cleaning is clean, the color is consistent, and there is no mottle. Compared with the cleaning agent of the prior art, the cleaning agent of the present invention can clean the silicon chip increased by 30%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a solar silicon wafer cleaning agent including 1 wt%-15 wt% of heterogeneous alcohol polyoxyethylene ether, 1 wt%-15 wt% of propanediol ether, 0.5 wt%-10 wt% of ethylene diamine tetraacetic acid tetrasodium salt, greater than zero and less than or equal to 10 wt% of an anionic surfactant, greater than zero and less than or equal to 20 wt% of a pH regulator, and the balance being water. The anionic surfactant and heterogeneous alcohol polyoxyethylene ether are adopted to compound, so that the cleaning agent has stronger cleaning ability; propanediol ether is selected as a solvent, and the kind of solvent is an organic solvent with low toxicity and no stimulation; meanwhile, ethylene diamine tetraacetic acid tetrasodium salt is also selected as a metal ion complexing agent, and copper, iron and other metal ions on the surface of a silicon wafer can be effectively removed; and finally, the pH regulator is selected to adjust the pH value of the cleaning agent, oil stains on the surface of the silicon wafer are effectively removed, and the cleaning effect is lasting and durable.

Description

technical field [0001] The invention relates to the technical field of a cleaning agent for the electronic industry, in particular to a cleaning agent for solar silicon wafers. Background technique [0002] Solar energy is an inexhaustible new and renewable energy source. The development and utilization of solar energy resources is of great significance for saving conventional energy, protecting the natural environment, promoting economic development and improving people's lives. Solar photovoltaic power generation has the advantages of unlimited resources, no pollution, direct conversion of sunlight into electrical energy, reliable operation and long life, so solar photovoltaic power generation is the most promising field in the solar energy application industry. [0003] Solar silicon wafer is one of the main materials of solar photovoltaic power generation products - solar cells. During the production process of cutting silicon rods into silicon wafers, a large amount o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C11D1/83C11D3/60C11D3/33C11D3/30C11D3/04C11D3/08
Inventor 支田田周君杨长剑
Owner ZHEJIANG SHUNLIAN INTELLIGENT EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com