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Method for converting graphite phase in nano-diamond film into diamond phase under low pressure

A nano-diamond and graphite phase technology, which is applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of high preparation cost, harsh experimental conditions, and high difficulty in preparing large single crystals, and achieve phase transition The effect of low temperature and increased diamond content

Pending Publication Date: 2022-07-15
ZHEJIANG UNIV OF TECH
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The experimental conditions for the synthesis of high-quality bulk single-crystal diamond by the HPHT method are extremely harsh. The pressure required for the phase transition is as high as several gigapascals or even higher, and the temperature condition is as high as several thousand degrees Celsius. The preparation cost is high, and the preparation of large blocks Single crystal is more difficult

Method used

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  • Method for converting graphite phase in nano-diamond film into diamond phase under low pressure
  • Method for converting graphite phase in nano-diamond film into diamond phase under low pressure
  • Method for converting graphite phase in nano-diamond film into diamond phase under low pressure

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Embodiment 1

[0034] One end of 6 annealed tantalum wires with a diameter of 0.7 mm and a purity of 99.99% is fixed on the electrode column, and the other end is fixed on the spring sheet. This operation can ensure that the tantalum wire does not bend during the carbonization process. The carbonization chamber pressure was 5.3kPa, the carbon source was acetone in an ice-water bath, the bubbling gas was hydrogen, the ratio of the bubbling flow and the straight-through hydrogen flow was 80:100sccm, the carbonization voltage was 7V, and the holding time was 10min. The carbonization voltage was increased to 12V, and the holding time was 10min, the carbonization voltage was increased to 15V, and the holding time was 5min.

[0035] Prepare 0.05g / ml diamond suspension in glycerol, the particle size of diamond powder is about 1 micron, drop the prepared suspension on the surface of the polishing fleece, and polish the monocrystalline silicon substrate on the polishing fleece for 0.5h; A 0.01g / ml di...

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Abstract

The invention discloses a method for converting a graphite phase in a nano-diamond film into a diamond phase under low pressure, which comprises the following steps: by taking a tantalum wire as a heat source of a hot filament chemical vapor deposition method, carrying out deep carbonization on the tantalum wire before depositing the nano-diamond film, and inhibiting high-temperature escape of tantalum in the film deposition process, tantalum exists in the nano-diamond film in the form of dispersed atoms, high-temperature annealing is conducted on the film, a graphite phase in the film can be converted into a diamond phase under the action of tantalum, and the method has very important scientific significance and engineering value for expanding the preparation method of diamond.

Description

technical field [0001] The present invention relates to a new method for preparing diamond under low pressure. Background technique [0002] Diamond has excellent physical, chemical, mechanical and electrical properties, such as high thermal conductivity, low thermal expansion coefficient, high hardness, acid resistance, alkali resistance, resistance to various corrosive gases, high electron mobility and wide band gap. Taking advantage of these excellent properties, diamond can be processed into abrasive tools such as grinding wheels, cutting tools, drill bits, etc., and has been widely used in the field of machinery industry. In addition, diamond is also used in different fields such as optical devices and acoustic devices, and is the fourth-generation semiconductor material after silicon carbide. [0003] As we all know, high temperature and high pressure (HPHT) method and chemical vapor deposition (CVD) method are currently common methods for preparing high-purity, bulk ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/02C23C16/56
CPCC23C16/271C23C16/0254C23C16/56
Inventor 胡晓君朱志光姜从强陈成克郭迪峰柯昌成
Owner ZHEJIANG UNIV OF TECH
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