Perovskite/silicon heterojunction laminated solar cell and preparation method thereof
A solar cell and silicon heterojunction technology, applied in the field of solar cells, can solve the problem of low photoelectric conversion efficiency of perovskite tandem solar cells, achieve the effects of improving photocurrent density and conversion efficiency, and reducing preparation and equipment costs
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[0049] The preparation method of the formal laminated structure comprises the following steps:
[0050] (1) The N-type crystalline silicon wafer is subjected to surface texturing treatment;
[0051] (2) double-sided passivation is performed on the N-type crystalline silicon wafer, and the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are grown on both sides of the passivated N-type crystalline silicon wafer by PECVD;
[0052] (3) sequentially growing a p-type heavily doped amorphous silicon layer and an n-type heavily doped amorphous silicon layer on the second intrinsic amorphous silicon layer;
[0053] (4) growing an n-type doped amorphous silicon layer on the side of the first intrinsic amorphous silicon layer away from the N-type crystalline silicon wafer;
[0054] (5) growing the first electron transport layer and the second electron transport layer on the surface of the n-type heavily doped amorphous silicon layer;
[0055] (6...
Embodiment 1
[0079] Preparation of formal perovskite / silicon heterojunction tandem cells
[0080] First, a commercial grade M6 N-type silicon wafer is used, with a resistivity of 1-10Ω.cm and a thickness of 150-200um. The N-type silicon wafer undergoes polishing, texturing and cleaning in sequence, and the intrinsic amorphous silicon passivation layer (thickness 5nm) is deposited on both sides of the silicon wafer by PECVD, and doping (doping concentration 10 nm) is prepared on the back side. 19-20 cm -3 ) of n-type heavily doped amorphous silicon (thickness 10nm), doping is prepared on the front side of the silicon wafer (doping concentration 10 19-20 cm -3 ) of p-type heavily doped amorphous silicon (thickness 10nm) and n-type heavily doped amorphous silicon (thickness 10nm) form a tunnel junction, on the backside of the silicon wafer n-type doped amorphous silicon (thickness 10nm) passes PVD Methods ITO (100nm) was prepared, and a silicon-based heterojunction bottom cell was prepared...
Embodiment 2
[0083] Fabrication of trans perovskite / silicon heterojunction tandem cells
[0084] First, a commercial grade M6 N-type silicon wafer is used, with a resistivity of 1-10Ω.cm and a thickness of 150-200um. The N-type silicon wafer undergoes polishing, texturing and cleaning in sequence, and the intrinsic amorphous silicon passivation layer (thickness 5nm) is deposited on both sides of the silicon wafer by PECVD, and doping (doping concentration 10 nm) is prepared on the back side. 19-20 cm -3 ) of p-type heavily doped amorphous silicon (thickness 10nm), doping is prepared on the front side of the silicon wafer (doping concentration 10 nm) 19-20 cm -3 ) of n-type heavily doped amorphous silicon (thickness 10nm) and p-type heavily doped amorphous silicon (thickness 10nm) to form a tunnel junction, and p-type doped amorphous silicon (thickness 10nm) passes through the backside of the silicon wafer ITO (100 nm) was prepared by PVD method, and a silicon-based heterojunction bottom...
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