Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Dewaxing liquid for LED (light-emitting diode) manufacturing process

A wax liquid and process technology, which can be used in the manufacture of semiconductor/solid-state devices, the preparation of detergent mixture compositions, and detergent compounding agents, etc., can solve the problems of reducing yield, increasing yield, cracking, etc., to improve efficiency and long service life. , Highlight the effect of penetration and dispersion performance

Pending Publication Date: 2022-07-29
福建省佑达环保材料有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, due to the thinned wafer, if the wafer warpage is large, it may cause cracks due to thermal expansion and contraction during the high-temperature wax removal process. Therefore, if the working temperature of the wax removal liquid can be lowered, the increase will also be reduced. Yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dewaxing liquid for LED (light-emitting diode) manufacturing process
  • Dewaxing liquid for LED (light-emitting diode) manufacturing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment and

[0026] Example and Comparative Example: A dewaxing liquid for LED manufacturing process.

[0027] The dewaxing liquids of Examples and Comparative Examples were prepared according to the compositions and mass percentages shown in Table 1 below. The preparation method is as follows: deionized water is firstly added to the stirring tank at normal temperature, other components are added in turn at a rotating speed of 60r / min, each material is put in and stirred until the system is clarified, and then the next material is added; all additions are completed. After that, continue stirring for 30 minutes. Then, it is filtered through two filter elements of 5 μm and 0.5 μm in turn, and finally the dewaxing liquid is obtained.

[0028]

[0029] AOS--C 14-16 Sodium Alkenyl Sulfonate; NaCS--Sodium Cumene Sulfonate; IPA--Isopropanol;

[0030] DHMP--2,6-Dihydroxymethylpyridine; SCDH--Sodium Citrate Dihydrate;

[0031] MOA-9P--fatty alcohol ether phosphate; SAS--sodium secondary alk...

experiment example

[0033] Experimental example: Determination of the performance of wax removal solution

[0034] In order to evaluate the performance of several dewaxing liquid compositions of Examples 1-6 and Comparative Examples 1-9 above, tests were conducted by the following tests.

[0035] 1. Evaluation of wax removal performance at low working temperature (55℃)

[0036] Usually, in order to ensure the removal of the bonding wax, the working temperature of the wax removal solution is increased (usually 80 °C), so that the bonding wax is easier to melt, and a better wax removal effect will be obtained. However, the higher working temperature will cause the slightly warped wafer to be easily broken due to thermal expansion and contraction in the subsequent cleaning. This experiment is used to test the wax removal effect of wax removal solution under low working conditions.

[0037] The wax removal solution was added to the ultrasonic cleaning tank and heated to 55°C. Adjust the ultrasonic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a dewaxing liquid for an LED (light-emitting diode) manufacturing process, belongs to the field of wet electronic chemicals, and is mainly applied to semiconductor wafer manufacturing. Through optimal combination of the specific anionic surfactant, the organic solvent, the cosolvent and the latent solvent, the dewaxing liquid greatly reduces the surface tension of a system, has outstanding permeation and dispersion performance, meanwhile, has relatively strong temperature resistance, low cost and high dewaxing efficiency, can also meet process requirements at relatively low working temperature, and is suitable for industrial production. The adhesive has the advantages of high solubility to bonding wax, long service life and environment-friendly material composition, and can meet the technological requirements of LED (light-emitting diode) manufacture procedures.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a dewaxing liquid used in an LED manufacturing process. Background technique [0002] With the development of the semiconductor industry, the size of the wafer is gradually developing towards a large size. Bonding wax polishing has gradually become the main polishing method for large-diameter wafers. In order to increase the brightness of the LED chip, for thin wafers, bonding wax polishing is to completely fix the wafer on the substrate, which is not easy to be broken during the polishing process, so it has also become the main polishing method for thin wafers. Way. Since the wafer is polished by wax polishing to remove the wax on the back surface of the wafer and prevent the excess wax from contaminating the front surface of the wafer, it is necessary to increase the wafer dewaxing process. [0003] In the traditional method, organic solvents are used f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/14C11D3/04C11D3/20C11D3/28C11D3/34C11D3/43C11D3/60C11D11/00H01L21/02H01L33/00
CPCC11D1/14C11D3/044C11D3/2017C11D3/3418C11D3/28C11D3/2086C11D3/43H01L33/005H01L21/0209C11D2111/22
Inventor 刘小勇田博侯琳熙房龙翔叶鑫煌肖小江刘文生
Owner 福建省佑达环保材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products