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PLD preparation method of large-area molybdenum ditelluride

A molybdenum ditelluride, large-area technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problem of difficulty in preparing high-quality large-area molybdenum ditelluride, save raw materials, reduce cost effect

Pending Publication Date: 2022-07-29
NANJING UNIV
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Problems solved by technology

[0007] The present invention aims at the problem that it is difficult to prepare high-quality and large-area molybdenum ditelluride in the prior art, and proposes a PLD preparation method for large-area molybdenum ditelluride

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  • PLD preparation method of large-area molybdenum ditelluride

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Embodiment Construction

[0028] In order to further understand the content of the present invention, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.

[0029] In the present invention, the molybdenum ditelluride film is first deposited on the substrate by a pulsed laser deposition system, and then the deposited film and Te powder are packaged into a vacuum quartz tube, and annealed at high temperature. According to different annealing conditions, 2H-MoTe can be prepared 2 and 1T’-MoTe 2 These two films of different phases, the overall preparation steps are as follows figure 1 shown.

[0030] Step 1: The fluorocrystalline mica substrate is treated with acetone, alcohol and deionized water. The method used in this embodiment is: first ultrasonically clean the fluorocrystalline mica substrate in acetone and anhydrous ethanol for 5 minutes, and then The cleaned substrates were soaked in deionized water for 20 minutes.

[0031] Step ...

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Abstract

The invention discloses a PLD (Pulsed Laser Deposition) preparation method of large-area molybdenum ditelluride, which comprises the following steps: under the conditions of certain temperature and pressure in a vacuum chamber of a pulsed laser deposition system (PLD), depositing a molybdenum ditelluride (MoTe2) film on a treated fluorine crystal mica substrate by using the pulsed laser deposition system; and packaging the deposited film and a proper amount of Te powder into a vacuum quartz tube for high-temperature annealing. According to different annealing conditions, two different-phase films of a semiconductor phase (2H-MoTe2) and a metal phase (1T '-MoTe2) can be prepared. The method is simple in principle, the thickness of the prepared molybdenum ditelluride can be regulated and controlled by changing the deposition time so as to meet different experiment requirements, compared with a traditional method, the centimeter-level large-area molybdenum ditelluride thin film can be stably prepared, raw materials can be greatly saved, cost can be greatly reduced, and the method is suitable for industrial production. And the process requirements of modern industrial preparation of molybdenum ditelluride are better met.

Description

technical field [0001] The invention discloses a large-area PLD preparation method of molybdenum ditelluride, which belongs to the technical field of electronic materials. Background technique [0002] Since the appearance of graphene material obtained by mechanical exfoliation technology in 2004, its unique physical properties and electronic transport properties have attracted great interest of researchers. Two-dimensional materials such as phosphorus (BP) and transition metal dichalcogenides (TMDs). Among them, there are many kinds of transition metal chalcogenides, and their structures, electrical properties, and magnetic properties are also different. The electrical conductivity ranges from insulators, semiconductors, semi-metals to metals, and the magnetic properties also range from ferromagnetic, antiferromagnetic to paramagnetic. , the emergence of these new materials provides an ideal platform for exploring novel physical phenomena and physical mechanisms. [0003]...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/28C23C14/58
CPCC23C14/28C23C14/0623C23C14/5806C23C14/5866
Inventor 王学锋李天康庄文卓张冲张荣
Owner NANJING UNIV
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