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Composite carbon material as well as preparation method and application thereof

A composite carbon and carbon substrate technology, which is applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of thermal expansion coefficient mismatch, silicon carbide coating easy to decompose, coating easy to fall off, etc. To achieve the effect of increasing life, avoiding peeling failure, and improving the stability of use

Active Publication Date: 2022-08-05
湖南泰坦未来科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a composite carbon material and its preparation method and application, which are used to solve the problem that the current carbon material has poor stability in a high temperature environment, the silicon carbide coating is easy to decompose, and the thermal expansion coefficient of the existing ultra-high temperature ceramic material coating is not the same as that of the carbon material. Matching, technical problems that cause the coating to fall off easily

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  • Composite carbon material as well as preparation method and application thereof

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Embodiment 1

[0038] like figure 1 As shown, the composite carbon material in this embodiment includes a carbon substrate and a composite coating disposed on the surface of the carbon substrate, and the carbon substrate is selected with a density of 1.8 g / cm 3 , a graphite substrate 1 with a graphite purity of 5 ppm, and the composite coating sequentially includes a silicon carbide composite layer, a first silicon carbide-tantalum carbide composite layer 4, a second silicon carbide-tantalum carbide composite layer 5, and a third silicon carbide-tantalum carbide composite layer from inside to outside. The silicon-tantalum carbide composite layer 6, the fourth silicon carbide-tantalum carbide composite layer 7 and the tantalum carbide layer 8; wherein, the silicon carbide composite layer includes the silicon carbide layer 3 and the carbides dispersed in the silicon carbide layer 3 and the graphite substrate 1 Silicon nanowires 2, the silicon carbide nanowires 2 protrude into the graphite subs...

Embodiment 2

[0051] The composite carbon material in this embodiment includes a carbon substrate and a composite coating disposed on the surface of the carbon substrate, and the carbon substrate is selected with a density of 1.8 g / cm 3 , a graphite substrate 1 with a graphite purity of 5 ppm, and the composite coating sequentially includes a silicon carbide composite layer, a first silicon carbide-tantalum carbide composite layer 4, a second silicon carbide-tantalum carbide composite layer 5, and a third silicon carbide-tantalum carbide composite layer from inside to outside. The silicon-tantalum carbide composite layer 6, the fourth silicon carbide-tantalum carbide composite layer 7 and the tantalum carbide layer 8; wherein, the silicon carbide composite layer includes the silicon carbide layer 3 and the carbides dispersed in the silicon carbide layer 3 and the graphite substrate 1 Silicon nanowires 2, the silicon carbide nanowires 2 extend into the graphite substrate 1 and the silicon car...

Embodiment 3

[0064] The composite carbon material in this embodiment includes a carbon substrate and a composite coating disposed on the surface of the carbon substrate, and the carbon substrate is selected with a density of 1.8 g / cm 3 , a graphite substrate 1 with a graphite purity of 5 ppm, and the composite coating sequentially includes a silicon carbide composite layer, a first silicon carbide-tantalum carbide composite layer 4, a second silicon carbide-tantalum carbide composite layer 5, and a third silicon carbide-tantalum carbide composite layer from inside to outside. The silicon-tantalum carbide composite layer 6, the fourth silicon carbide-tantalum carbide composite layer 7 and the tantalum carbide layer 8; wherein, the silicon carbide composite layer includes the silicon carbide layer 3 and the carbides dispersed in the silicon carbide layer 3 and the graphite substrate 1 Silicon nanowires 2, the silicon carbide nanowires 2 protrude into the graphite substrate 1 and the silicon c...

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Abstract

The invention discloses a composite carbon material and a preparation method and application thereof.The composite carbon material can be used for manufacturing a tray of MOCVD equipment, the composite carbon material comprises a carbon base material and a composite coating arranged on the surface of the carbon base material, and the composite coating comprises a silicon carbide composite layer, a silicon carbide-tantalum carbide composite layer and a tantalum carbide layer which are sequentially stacked from inside to outside; the preparation method comprises the following steps: (1) preparing a silicon carbide nanowire layer on a carbon substrate in situ, and depositing silicon carbide after preparation to form a silicon carbide composite layer; (2) depositing a silicon carbide-tantalum carbide composite layer on the surface of the silicon carbide composite layer; and (3) depositing on the surface of the silicon carbide-tantalum carbide composite layer to form a tantalum carbide layer. The use stability of the carbon substrate is improved, the application range and the application scene are widened, the problem of thermal mismatch is solved, the bonding strength of the coating is improved, and the service life is prolonged; the production period and the production cost are effectively reduced, and large-scale industrial production can be effectively realized.

Description

technical field [0001] The invention relates to the technical field of carbon materials and carbon material coatings, in particular to a composite carbon material and a preparation method and application thereof. Background technique [0002] The third-generation semiconductors are wide-bandgap semiconductors, represented by silicon carbide and gallium nitride. They have superior performances such as high frequency, high efficiency, high power, high voltage resistance, high temperature resistance, and strong radiation resistance. Key core materials and electronic components for independent innovation, development, transformation and upgrading of industries such as new energy vehicles, high-speed rail trains, and energy Internet. Secondly, the inherent characteristics of the third-generation semiconductor power chips and devices determine their high power efficiency in the fields of photovoltaic, wind power and other new energy power generation, DC UHV power transmission, ele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/89C23C16/458
CPCC04B41/89C04B41/52C04B41/009C23C16/4581C04B35/52C04B41/5059C04B41/4535C04B41/0072C04B41/5057C04B41/4564C04B41/4531
Inventor 不公告发明人
Owner 湖南泰坦未来科技有限公司
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