Radiator capable of notable controlling high frequency current passing through electronic element

A technology of electronic components and high-frequency current, which is applied in the direction of electrical components, electric solid devices, circuits, etc., and can solve problems such as insufficient consideration of high-frequency current prevention measures and difficulties

Inactive Publication Date: 2005-10-05
TOKIN CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the existing electronic components or heat sinks, no sufficient consideration has been given to countermeasures against high-frequency currents
Therefore, it is more difficult to prevent electromagnetic interference caused by high-frequency current

Method used

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  • Radiator capable of notable controlling high frequency current passing through electronic element
  • Radiator capable of notable controlling high frequency current passing through electronic element
  • Radiator capable of notable controlling high frequency current passing through electronic element

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0058] use Figure 6A The sputtering device shown in Table 1 was used to produce thin films of M-X-Y magnetic composites on glass plates according to the sputtering conditions in Table 1.

[0059] Vacuum before sputtering

-6 torr

atmosphere

Ar gas

electricity

RF

target plating

Fe (diameter 100mm) and Al 2 o 3

Chip (120 pieces) (chip size: 5mm

×5mm×2mm)

[0060] The prepared thin film sample 1 was analyzed by means of a fluorescent X-ray spectrometer, and was confirmed to be a synthetic Fe 72 Al 11 o 17 film. Film sample 1 with a thickness of 2.0 micrometers (μm), a DC specific resistance of 530 microohm centimeters (μΩcm), an anisotropic magnetic field (Hk) of 18 Oersteds (Oe), and a saturation magnetization (Ms) of 16,800 Gauss .

[0061] The percentage {Ms(M-X-Y) / Ms(M)}×100 of the saturation magnetization of the thin film sample 1 to the metallic magnetic material M itself is 72.2%.

[0062] I...

example 2

[0064] Similar to Example 1 except that 150 Al 2 o 3 Thin film sample 2 was formed on a glass plate under chip conditions.

[0065] The prepared thin film sample 2 was analyzed by means of a fluorescent X-ray spectrometer, and was confirmed to be a synthetic Fe 44 Al 22 o 34 film. Film sample 2 has a thickness of 1.2 micrometers (μm), a DC specific resistance of 2400 microohm centimeters (μΩcm), an anisotropic magnetic field (Hk) of 120 Oe, and a saturation magnetization (Ms) of 9600 Gauss. It should be noted that the specific resistance of film sample 2 is higher than that of film sample 1.

[0066] The percentage {Ms(M-X-Y) / Ms(M)}×100 of the saturation magnetization of the thin film sample 2 to the magnetization of the metal magnetic material M itself was 44.5%.

[0067] The μ”-f response characteristic of film sample 2 is also obtained in a similar way to sample 1, such as Figure 8 shown. It is to be noted that, similar to the case in film sample 1, this peak also ...

example 4

[0078] use Figure 6A According to the sputtering conditions in Table 2, a M-X-Y magnetic composite thin film was formed on a glass plate by a reactive sputtering method. N 2 The partial pressure ratio is 20%. The film was heat-treated at 300° C. for two hours under a vacuum and a magnetic field to obtain a film sample 4 .

[0079] Vacuum before sputtering

-6 Torr

atmosphere

Ar+N 2 the gas

electricity

RF

target plating

Fe (100mm diameter) and Al cores

Chips (150 pieces) (chip size: 5mm×

5mm×2mm)

[0080] The properties of Film Sample 4 are shown in Table 3.

[0081] membrane thickness

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PUM

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Abstract

In a radiator (1) for use in radiating heat generated by an electronic component (5), a high-frequency current suppressor (2) is attached to that principal surface of the radiator which faces the electronic component. The high-frequency current suppressor serves to attenuate a high-frequency current flowing through the radiator and having a frequency within a frequency band between several tens MHz and several GHz. It is preferable that a heat-conductive sheet is formed on the high-frequency current suppressor. An insulating sheet may be formed on the high-frequency current suppressor.

Description

technical field [0001] The present invention relates to a heat sink for dissipating the heat generated by an electronic component in an excited state to prevent the temperature of the electronic component from rising, which is attached to the electronic component itself or attached to it. on circuit boards or housings of electronic components. Background technique [0002] Electronic devices and data processing devices on which various electronic components are mounted are used in the field of electronic communication. These electronic components are generally mounted on circuit boards equipped with conductive patterns. [0003] These electronic components can be various semiconductor active devices, including Random Access Memory (RAM), Read Only Memory (ROM), Microprocessor (MPU), Central Processing Unit (CPU) and Image Processor Algorithmic Logic Unit (IPALU) ). Generally, these semiconductor active devices are used at high frequencies and operate at high speeds. For ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05K7/20H01L23/36H01L23/373H01L23/552H01L23/66H05K9/00
CPCH01L2924/0002H01L2924/01012H01L2924/01039H01L23/66H01L23/36H01L2924/3011H01L23/552H01L2924/30107H01L2924/00H05K7/20
Inventor 吉田荣吉栗仓由夫小野裕司
Owner TOKIN CORP
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