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T shape grid metal stripping method

A gate metal and metal evaporation technology, which is applied in the field of T-shaped gate metal stripping, can solve the problems of chip residual glue, unevenness, slow dissolution speed, etc., and achieve the effect of good effect, simple steps and easy process

Inactive Publication Date: 2006-07-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, PMGI dissolves slowly and unevenly in conventional stripping solutions, and there is residual glue on the surface of the chip after stripping

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] (1) Take the original substrate, clean, mark, make isolation islands, source and drain metal evaporation, stripping, alloying and other processes, gate photolithography, development, gate metal evaporation and other process steps before gate stripping.

[0023] (2) Put the evaporated chip into a container filled with acetone reagent to ensure that the chip is immersed below the liquid surface.

[0024] (3) After about 5 to 10 minutes, observe the metal condition. Generally, after 10 minutes, the metal other than the grid lines will peel off.

[0025] (4) After confirming that the surface metal peels off in a large area, the chip is taken out from the acetone reagent, and rinsed in ethanol solution and water.

[0026] (5) Dry the chip with nitrogen gas.

[0027] (6) Expose for 60 seconds under an ultraviolet light exposure lamp.

[0028] (7) Put the chip into TMAH:H 2 Soak in O=4:1 solution for 100 seconds.

[0029] (8) Rinse off the reagents with water and blow dry ...

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PUM

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Abstract

The present invention relates to a T-type grid metal stripping method, and said method includes the following steps: placing the chip after which is evaporated in a container in which the acetone reagent is held, soaking said chip under the liquid level, the metal outside of grid line can be peeled off, taking out said chip from acetone reagent, washing said chip with ethyl alcohol solution and water, blow-drying the chip by using nitrogen gas, exposing said chip to UV light, then soaking the chip in the solution of TMAH:H2O=4:1, water-washing to remove reagent, blow-drying, placing the chip in the container in which the acetone reagent is held, and soaking chip, then taking out it, washing it with ethyl alcohol solution and water, blow-drying it by using nitrogen gas, checking surface so as to complete the metal stripping process.

Description

technical field [0001] The invention belongs to the technical field of semiconductor microelectronics, in particular to a T-shaped gate metal stripping method. Background technique [0002] Indium phosphide (InP)-based and gallium arsenide (GaAs)-based compound semiconductor materials are not only excellent optoelectronic materials, but also ideal ultra-high-speed microelectronic materials, which have broad applications in optical communications, satellite communications, mobile communications, and space energy . At present, the highest oscillation frequency (f max ) up to 600GHz InP-based high electron mobility transistor (HEMT), becoming the fastest three-terminal device, the f of InP-based heterojunction transistor (HBT) max It has also reached 250GHz. It is an ideal device for the drive circuit of the transmitting module and the amplifying circuit of the receiving module in the next generation of high-speed optical communication system. [0003] The high-frequency per...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28
Inventor 张海英刘训春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI