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Method for depositing metal and metal oxide films and patterned films

A technology of metal complexes and patterns, applied in chemical instruments and methods, conductive pattern formation, metal material coating technology, etc.

Inactive Publication Date: 2006-08-16
SIMON FRASER UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Based on the prior art, no one expected at all that it would be possible to apply these novel precursors for the deposition of metal or metal oxide films

Method used

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  • Method for depositing metal and metal oxide films and patterned films
  • Method for depositing metal and metal oxide films and patterned films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In a preferred embodiment, the precursor Cu is deposited on the substrate 2 (μ-Et 2 NCH 2 CH 2 O) 2 (N 3 ) 2 . The Cu was then photolyzed by ultraviolet light (254 nm) in a nitrogen atmosphere 2 (μ-Et 2 NCH 2 CH 2 O) 2 (N 3 ) 2 membrane. The progress of the reaction was monitored using Fourier transform infrared spectroscopy. After complete photolysis, the conductivity of the film was measured. The electrical conductivity of this film was 1.8 µΩcm. The film was analyzed and found to contain copper.

[0033] Alternatively, exposure of a similar precursor film to air will result in the formation of copper oxide. The oxide film can be reduced by hydrogen or any other suitable reducing agent at high temperature to form a copper film.

Embodiment 2

[0035] In another preferred embodiment, the deposition consists of Cu 2 (μ-Et 2 NCH 2 CH 2 O) 2 (N 3 ) 2 and Cu 2 (μ-Et 2 NCH 2 CH 2 O) 2 (NCO) 2 A mixture of two precursors is formed to form a film. The film was photolyzed to form a conductive copper-based film.

Embodiment 3

[0037] In another embodiment, depositing Cu 2 (μ-Et 2 NCH 2 CH 2 O) 2 (N 3 ) 2 film and photolyze it through a lithographic mask. The film thus formed was washed with ethyl acetate, while the copper oxide pattern remained on the surface.

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Abstract

A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.

Description

field of invention [0001] The present invention relates to the use of metal complexes to deposit metal or metal oxide films. Such films are useful in a variety of applications including, but not limited to, microelectronics manufacturing. Background of the invention [0002] Thin films deposited using non-vacuum techniques typically include sol-gel or metalorganic or include photochemical metalorganic deposition. Films of inorganic materials are usually deposited by chemical or physical vacuum deposition, although in some cases, sol-gel or metal-organic deposition is applied. Sol-gel or metal-organic deposition requires the preparation of precursor films. These films are then heated to remove the organic components, leaving behind metal or, more generally, metal oxide films. Photochemical deposition differs from the above two methods in that it removes organic components by photochemical activation. Since none of these methods are capable of patterning structures commonl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/14C22B7/00C09K13/00C11D7/32C11D7/34G03F7/42H01L21/02H01L21/28H01L21/306H01L21/311H01L21/3213H01L21/768H05K3/10
CPCH01L21/02052C23C18/14H01L21/76807H05K3/105C11D7/3218H01L21/76838G03F7/425H01L21/76814C11D7/3281C23C18/1245C09K13/00G03F7/426C23C18/06C23C18/1216H01L21/76894H01L21/02071C11D7/34Y10S148/903C23C18/1295H01L21/31116C23C18/08C23C18/143C23C18/145Y10T428/12493Y10T428/12903C23C16/00
Inventor R·H·希尔石有茂
Owner SIMON FRASER UNIVERSITY