8 results about "CHOLINE HYDROXIDE" patented technology

The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.

The application discloses a kind of choline-amino acid ionic liquid for efficiently enriching TG, EPA or DHA in oil, and a preparation method and application thereof, and belongs to the technical field of ionic liquid preparation.The method comprises dissolving amino acid in water, adding choline hydroxide, then heating to 50-70 DEG C to react, after reaction is completed, purification is carried out, and choline-amino acid ionic liquid is obtained, wherein the molar ratio of amino acid to choline hydroxide is 1: (0.5-2.5).The choline-amino acid ionic liquid is green and pollution-free, and can be used for crude oil refining in food, medicine and other fields, especially suitable for crude oil containing DHA, EPA, such as algal oil and fish oil, and can complete degumming, deacidification and decolorization process in one step, significantly simplifying the crude oil refining process, reducing energy consumption and waste discharge.

The application provides a degradable water-based ink and a preparation method thereof, and belongs to the technical field of novel ink preparation. Unsaturated vegetable oil is used as raw material, non-isocyanate polyhydroxy polyurethane is prepared through epoxidation, CO2 carbonation and diamine ring-opening polymerization, carboxyl groups are introduced through acid anhydride, and water-phase self-emulsifying dispersion is realized through main neutralization of arginine and auxiliary neutralization of choline hydroxide, so that biological base and low odor and low VOCs are considered from the source; the obtained polyhydroxy polyurethane has the functions of connecting material and pigment anchoring and dispersing, the dependence on traditional dispersants and a large amount of surfactants is reduced through segmented pulping and ink releasing process; nanocellulose is introduced to realize shear thinning and thixotropic recovery to improve printing adaptability, and a cobalt-free manganese / iron catalytic drying system is used to improve the scratch resistance and water resistance under mild conditions; through the above multi-link cooperation, the comprehensive balance of sustainability, stable dispersion and printing performance is realized.

The present invention relates to a cleaning composition and a cleaning method for a CMP process performed during the manufacturing process of a glass substrate-based Through Glass Via (TGV) structure. The cleaning composition comprises a quaternary ammonium salt, an alkanolamine, a glycol ether, an azole compound, a surfactant, and water. By including tetramethylammonium hydroxide and choline hydroxide as the quaternary ammonium salt in a specific ratio, the cleaning composition effectively removes polishing particles and organic residues remaining after the CMP process even under high alkaline conditions of pH 12 or higher, while suppressing excessive corrosion of the glass substrate and metal wiring, allowing the cleaning solution to penetrate uniformly into the high aspect ratio via, and simultaneously removing residual contaminants and preventing re-adsorption.

The application provides a method for selectively recovering metal elements in waste batteries by using a functional deep eutectic solvent, which comprises the following steps: mixing choline chloride, phosphoric acid and a choline hydroxide solution to obtain a deep eutectic solvent DES; pretreating a positive electrode of a waste lithium iron phosphate (LFP) battery and a waste lithium cobalt oxide (LCO) battery; and immersing the positive electrode in the deep eutectic solvent DES to make Li + enriched into the leaching solution, Fe is converted into FePO4 and left in the residue, and then cobalt is recovered by "ethanol-induced precipitation", lithium is recovered by "pH-controlled precipitation", and the DES is regenerated. 2+ This method realizes the closed loop of lithium iron phosphate and lithium cobalt oxide battery recycling in a green and economic way through the strategies of segmented targeted leaching and selective coordination precipitation, combined with solvent regeneration.

This invention relates to the field of wet electronic chemicals technology and discloses a neutral metal cleaning agent for photomasks and its preparation method, comprising: 1.8% to 2.2% free acidic phytic acid, 0.55% to 0.75% ethoxylated acetylenic glycol with a specific EO addition number (3.5), a choline hydroxide-acetic acid buffer pair to maintain a neutral environment, and ultrapure water. This invention utilizes a geometrically complementary anti-dilution desorption adsorption layer formed on the metal surface by phytic acid and ethoxylated acetylenic glycol at a specific mass ratio (2.8:1-3.2:1). This layer maintains a negative Zeta potential and provides steric hindrance during the non-equilibrium process of ultrapure water rinsing, blocking the reverse pinning of submicron particles. This adsorption layer can inhibit intergranular corrosion and pitting on the metal surface, achieving non-destructive cleaning of precision patterns.

This invention discloses an environmentally friendly and efficient 4H-SiC polishing slurry and its preparation method, belonging to the technical field of polishing compositions. The 4H-SiC polishing slurry of this invention comprises the following components: 1.5 wt.%~6 wt.% abrasive, 0.2 wt.%~0.4 wt.% photocatalyst, 2 wt.%~4 wt.% H2O2, an organic base pH adjuster to adjust the pH value of the 4H-SiC polishing slurry to 8~11, and the balance being water; wherein the organic base pH adjuster includes at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, and choline hydroxide. The composition design of this invention is simple and easy to prepare. It has a high material removal rate for 4H-SiC, significantly reduces surface roughness after polishing, and is environmentally friendly and pollution-free, possessing the advantages of being environmentally friendly and efficient, and has broad application prospects in high-precision polishing of 4H-SiC.