The invention relates to the field of
semiconductor technology, and particularly to an electric leakage point positioning method for aiming at a floating gate. The method comprises the steps of S1, supplying a floating gate device; S2, eliminating a
metal connecting line layer by means of a first
etching process; S3, eliminating an insulating layer by means of a second
etching process; S4, eliminating a protecting layer by means of a third
etching process; S5, eliminating a control gate layer by means of a fourth etching process; S6, performing longitudinal
cutting on the floating gate layer and a composite insulating layer by means of a
cutting process, thereby forming a plurality of
cutting blocks which are separated from one another; and S7, performing implantation on the upper surfaceof each cutting block by means of an
electron /
ion implantation process, and positioning the electric leakage point according to the brightness condition of each cutting block; wherein the fourth etching process is a wet etching process in which
choline hydroxide solution is utilized. The electric leakage point positioning method has advantages of realizing accurate positioning in the composite insulating layer, further accurately positioning the electric leakage point in the floating gate, and ensuring effectiveness in testing
breakdown voltage.