Covalent layer-by-layer self-assembling process for constructing polymer film on planar substrate
A layer-by-layer self-assembly and polymer film technology, applied in chemical instruments and methods, lamination, layered products, etc., to achieve fast response, high temperature stability, and stable structure
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Embodiment 1
[0031] The silicon wafer was soaked in 40% hydrofluoric acid for 10 seconds, rinsed with water, dried and suspended above a dry toluene solution of 1% aminopropyltriethoxysilane, and the solution was heated to boiling for 1 hour, Take out to obtain an aminated silicon wafer. The aminated silicon wafer was placed in a 4 mg / ml solution of polyglycidyl methacrylate in tetrahydrofuran, and evacuated with an oil pump until no more bubbles were generated on the substrate. It was then sealed, shaken at 20°C for 10 hours, then removed and sonicated several times with tetrahydrofuran. The silicon wafer was then placed in a 4 mg / ml aqueous solution of polyallylamine, evacuated with a water pump until no bubbles were formed on the silicon wafer, then sealed, shaken at 20°C for 10 hours, then taken out and sonicated with water Wash several times. The above process was repeated to obtain polymer films assembled with 4 layers, 8 layers, 12 layers and 16 layers. Ellipsometry testing demon...
Embodiment 2
[0033] The silicon wafer was soaked in 10% hydrofluoric acid for 10 seconds, rinsed with water, dried, suspended above a dry toluene solution of 5% aminopropyltrimethoxysilane, heated until the solution boiled for 2 hours, taken out, Aminated silicon wafers were obtained. The aminated silicon wafer was placed in a 1 mg / ml solution of polyglycidyl methacrylate in tetrahydrofuran, evacuated with a water pump until bubbles no longer appeared on the silicon wafer, then sealed and shaken at 60°C for 0.5 hours , and then removed and sonicated several times with acetone. The silicon wafer was then placed in a 1 mg / ml aqueous solution of polyallylamine, evacuated with a water pump until no more bubbles were formed on the silicon wafer, then sealed, shaken at 60 °C for 0.5 hours, then taken out and sonicated with water. Wash several times. The above process was repeated 4 times to obtain an 8-layer polymer multilayer film. Figure 2(a) shows the results of the small-angle X-ray diffr...
Embodiment 3
[0035] The silicon wafer was soaked in 20% hydrofluoric acid for 2 minutes, rinsed with water, dried, suspended above a dry toluene solution of 10% aminopropyltrimethoxysilane, heated until the solution boiled for 5 hours, and taken out to obtain Aminated silicon wafers. The aminated silicon wafer was placed in 8 mg / ml polyglycidyl methacrylate in tetrahydrofuran solution, evacuated with a water pump until bubbles no longer appeared on the silicon wafer, then sealed and shaken at 60 °C for 0.5 hours , then removed and washed several times with chloroform in sonication. The silicon wafer was then placed in an aqueous solution of 8 mg / ml polyallylamine, evacuated with an oil pump until no bubbles were formed on the silicon wafer, then sealed, shaken at 80 °C for 0.5 hours, then taken out, and sonicated with water. Wash several times. The above process was repeated 6 times to obtain a 12-layer polymer multilayer film. Figure 2(b) shows the results of the 12-layer polymer multi...
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