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Covalent layer-by-layer self-assembling process for constructing polymer film on planar substrate

A layer-by-layer self-assembly and polymer film technology, applied in chemical instruments and methods, lamination, layered products, etc., to achieve fast response, high temperature stability, and stable structure

Inactive Publication Date: 2007-08-15
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Covalent layer-by-layer self-assembling process for constructing polymer film on planar substrate
  • Covalent layer-by-layer self-assembling process for constructing polymer film on planar substrate
  • Covalent layer-by-layer self-assembling process for constructing polymer film on planar substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The silicon wafer was soaked in 40% hydrofluoric acid for 10 seconds, rinsed with water, dried and suspended above a dry toluene solution of 1% aminopropyltriethoxysilane, and the solution was heated to boiling for 1 hour, Take out to obtain an aminated silicon wafer. The aminated silicon wafer was placed in a 4 mg / ml solution of polyglycidyl methacrylate in tetrahydrofuran, and evacuated with an oil pump until no more bubbles were generated on the substrate. It was then sealed, shaken at 20°C for 10 hours, then removed and sonicated several times with tetrahydrofuran. The silicon wafer was then placed in a 4 mg / ml aqueous solution of polyallylamine, evacuated with a water pump until no bubbles were formed on the silicon wafer, then sealed, shaken at 20°C for 10 hours, then taken out and sonicated with water Wash several times. The above process was repeated to obtain polymer films assembled with 4 layers, 8 layers, 12 layers and 16 layers. Ellipsometry testing demon...

Embodiment 2

[0033] The silicon wafer was soaked in 10% hydrofluoric acid for 10 seconds, rinsed with water, dried, suspended above a dry toluene solution of 5% aminopropyltrimethoxysilane, heated until the solution boiled for 2 hours, taken out, Aminated silicon wafers were obtained. The aminated silicon wafer was placed in a 1 mg / ml solution of polyglycidyl methacrylate in tetrahydrofuran, evacuated with a water pump until bubbles no longer appeared on the silicon wafer, then sealed and shaken at 60°C for 0.5 hours , and then removed and sonicated several times with acetone. The silicon wafer was then placed in a 1 mg / ml aqueous solution of polyallylamine, evacuated with a water pump until no more bubbles were formed on the silicon wafer, then sealed, shaken at 60 °C for 0.5 hours, then taken out and sonicated with water. Wash several times. The above process was repeated 4 times to obtain an 8-layer polymer multilayer film. Figure 2(a) shows the results of the small-angle X-ray diffr...

Embodiment 3

[0035] The silicon wafer was soaked in 20% hydrofluoric acid for 2 minutes, rinsed with water, dried, suspended above a dry toluene solution of 10% aminopropyltrimethoxysilane, heated until the solution boiled for 5 hours, and taken out to obtain Aminated silicon wafers. The aminated silicon wafer was placed in 8 mg / ml polyglycidyl methacrylate in tetrahydrofuran solution, evacuated with a water pump until bubbles no longer appeared on the silicon wafer, then sealed and shaken at 60 °C for 0.5 hours , then removed and washed several times with chloroform in sonication. The silicon wafer was then placed in an aqueous solution of 8 mg / ml polyallylamine, evacuated with an oil pump until no bubbles were formed on the silicon wafer, then sealed, shaken at 80 °C for 0.5 hours, then taken out, and sonicated with water. Wash several times. The above process was repeated 6 times to obtain a 12-layer polymer multilayer film. Figure 2(b) shows the results of the 12-layer polymer multi...

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Abstract

The covalent layer-by-layer self-assembling process for constructing polymer film on planar substrate includes the first reaction of the substrate of surface aminated quartz or silicon chip and polymer with side radical containing epoxy group to form one layer of nanometer superthin film on the substrate by means of covalent bond; the subsequent reaction to polymer with side radical containing amino group to form one other layer of nanometer superthin film; and repeating the reaction with these two kinds of polymer solution to form superthin polymer film in multilayer structure, with each of the layers possessing thickness capable of being regulated in subnanometer level. The present invention has the features of simple technological process, adjustable film thickness, easy functionalizing, acid, base and organic solvent resistance of the film, high stability, etc. and is expected to find application in electronics, medicine, chemical and other fields.

Description

technical field [0001] The invention relates to a method for preparing a polymer ultra-thin film on the surface of a substrate. Specifically, the interaction of covalent bonds is used to form a polymer ultra-thin film with a multi-layer structure through the layer-by-layer assembly reaction of two reactive polymers on the surface of the substrate. Background technique [0002] The construction of polymer films with specific structures and properties on the surface of substrates has important applications in the fields of sensors, microelectronics, food packaging, construction and biotechnology. In these applications, these films are required to have uniformity, stability, reproducibility, adjustability of film thickness, and certain functionality. There are many methods to obtain polymer ultrathin films on the surface of substrates, such as surface sol-gel, surface graft polymerization, surface coupling, microcontact printing, single-molecule self-assembly, LB film and laye...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/24B32B38/08B32B27/00
Inventor 高长有封志强王志鹏沈家骢
Owner ZHEJIANG UNIV