Manufacturing method and application of single wall carbon nano tube

A technology of single-walled carbon nanotubes and nanotubes, which is applied in the surface field, can solve the problems of uncontrolled spatial helicity and diameter, and no ordered arrays are produced, achieving the effect of high order degree

Inactive Publication Date: 2002-06-12
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ordered arrays capable of surpassing short lengths of ordered single-walled carbon nanotubes consisting of dozens of nanotubes have not yet been produced.
Likewise, the spatial helicity and diameter are not controlled

Method used

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  • Manufacturing method and application of single wall carbon nano tube
  • Manufacturing method and application of single wall carbon nano tube
  • Manufacturing method and application of single wall carbon nano tube

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0030] In the following, various embodiments of the present invention are described.

[0031] The method used to fabricate single-walled carbon nanotube crystals involves nanoscale patterning of a solid matrix material. Fullerene (here C 60 molecules) and a controlled mixture of nickel as a catalyst evaporates onto a molybdenum substrate. The resulting structure is then pyrolyzed in vacuum in the presence of a magnetic field. A combination of electron diffraction studies and electron energy loss spectroscopy (EELS) confirmed that the resulting structures are nearly perfect columnar crystals of single-walled carbon nanotubes oriented perpendicular to the substrate surface.

[0032] A first schematic diagram of an apparatus for manufacturing single-walled carbon nanotubes is shown in FIG. 1 .

[0033] The reaction chamber 1 comprises four openings, a first opening through which is passed a sample holder 9 for holding a substrate 4 and a patterned evaporation template 7, also ...

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Abstract

The invention is directed to a method of manufacturing single-walled carbon nanotubes comprising the steps of providing on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst, and heating the at least one pillar in the presence of a first magnetic or electric field. It further is directed to a precursor arrangement for manufacturing single-walled carbon nanotubes comprising on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst. A third aspect is a nanotube arrangement comprising a substrate and thereupon at least one crystal comprising a bundle of single-walled carbon nanotubes with essentially identical orientation and structure.

Description

[0001] The present invention relates to a method of fabricating single-walled carbon nanotubes that promotes the self-assembly of single crystals of single-walled carbon nanotubes by field-enhanced thermal decomposition of nanopatterned precursors. Background technique [0002] Carbon nanotubes have been the subject of intense research since their discovery in 1991. One of the most desirable goals for making carbon nanotubes is to form very consistent and ordered nanostructures and microstructures, and ultimately bulk materials. [0003] Potential applications of single-walled carbon nanotubes range from structural materials with extraordinary mechanical properties to nanoelectronic components with the potential to break Moore's law. Single-walled carbon nanotubes can be used as the tip-most probe tip for scanning probe microscopy, with the added ability to render the apex functional for chemical analysis. These nanostructures could also be used to make microbalances, gas det...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02C30B1/00C30B23/00
CPCB82Y40/00Y10S977/844C01B31/0233C01B2202/02Y10S977/843B82Y30/00Y10S977/75C30B1/00C30B23/005C30B23/00C30B29/02C30B29/605C01B32/162Y10T428/13Y10T428/30Y10T428/31663
Inventor 詹姆斯·K·吉姆泽斯基雷托·施里特勒徐真源
Owner IBM CORP
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