Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ferroelectric FET and its preparing process

An electric field effect and transistor technology, which is applied in the field of microelectronic devices, can solve problems such as fatigue and poor interface characteristics, and achieve the effects of simplifying the process, improving the yield, and realizing non-volatile storage

Inactive Publication Date: 2002-07-03
HUAZHONG UNIV OF SCI & TECH
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a novel ferroelectric field effect transistor, which can overcome the shortcomings of poor interface characteristics and fatigue of general ferroelectric memory effect devices, and has good storage performance; the present invention also provides a method for preparing the ferroelectric field effect transistor. A method for effect transistors, which simplifies the process, is compatible with the semiconductor IC process, and effectively improves the yield of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ferroelectric FET and its preparing process
  • Ferroelectric FET and its preparing process
  • Ferroelectric FET and its preparing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019]The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0020] Such as figure 1 As shown, the ferroelectric field effect transistor can be divided into several identical unit segments, and the unit segment is composed of a substrate 1, a source region 2, a drain region 4, and a gate region 3 between the source region 2 and the drain region 4, The substrate 1 is a P-type single crystal silicon wafer with a (100) crystal orientation, and the source region 2 and the drain region 4 are N + The ion implantation area is embedded in the surface of the substrate 1, and the gate area 3 is bismuth titanate Bi 4 Ti 3 o 12 The thin film is located on the upper surface of the substrate 1, and there is a layer of Ag electrodes on the surfaces of the source region 2, the gate region 3 and the drain region 4, which form the source electrode 5, the gate electrode 6 and the drain electrode 7 respectively.

[0021] The preparatio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A ferroelectric FET with bismuth titanate (BIT) film as storage medium layer is prepared through washing Si substrate, coating photoresist, exposing, developing to obtain pattern, etching to form recess, coating photoresist, phootoetching to form injection windows of source and drain areas, ion implantation to form source and drain areas, depositing ferroelectric BIP film, etching off the film over source and drain areas to obtain the windows of source and drain, plating AG layer, and reverse etching to obtain source, drain and grid. Its advantages include good interface performance, long information storage time and high rate of finished products.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, and specifically relates to a ferroelectric field effect transistor, in particular to a nonvolatile, Ag / BIT gate ferroelectric field effect transistor; the invention also relates to a preparation method of the ferroelectric field effect transistor. Background technique [0002] The ferroelectric field effect transistor (hereinafter referred to as "FFET") uses the MFIS (Metal / Ferroelectric / Insulator / Semiconductor) structure as the basic storage unit, which replaces the gate dielectric layer in the semiconductor field effect transistor with a ferroelectric film, and passes the gate polarization (±P r ) realizes the modulation of the source-drain current, making it significantly increase or decrease. When a write pulse is applied to the gate, the ferroelectric film is permanently polarized, and the source and drain are turned on to a "1" state. If a reverse pulse is applied, the channel is tu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/335H01L29/772
Inventor 于军王华王耘波周文利周东祥刘刚谢基凡高俊雄
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com