Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photoinduction SiO2 gel preparation and microfine pattern making method thereof

A technology for the preparation of fine graphics and thin films, which is applied in the production of optical splitters, grooved substrates, and optical diffraction components such as gratings. The effect of process simplification

Inactive Publication Date: 2002-07-17
XIAN UNIV OF TECH
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods are technically difficult and have great difficulties in practical application.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoinduction SiO2 gel preparation and microfine pattern making method thereof
  • Photoinduction SiO2 gel preparation and microfine pattern making method thereof
  • Photoinduction SiO2 gel preparation and microfine pattern making method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1: see Figure 1~3 , the photosensitive SiO of the present invention 2 Gel thin film preparation and its fine pattern making method are carried out as follows: (1) photosensitive SiO 2 Sol preparation

[0035] Firstly, the photosensitive sol is prepared by chemical modification method, and the components and proportions of the sol are as follows:

[0036] TEOS:H 2 O:HCl:EeOH:Ph=1:4:0.05:20:0.5

[0037] TEOS:---Ethyl Orthosilicate (Si(OC 2 h 5 ) 4 ) to generate SiO 2 basic raw material

[0038] EeOH:----ethanol (C 2 h 5 OH) solvent

[0039] Ph:---Philoline (C 12 h 8 N 2) Chemical modifiers that form photosensitive chelates

[0040] h 2 O---water is the basic raw material for water addition reaction with TEOS

[0041] HCl---hydrochloric acid is a catalyst to accelerate the reaction.

[0042] After mixing and stirring the chemical reagents of the above components for 4 hours, a uniform and transparent sol can be obtained. (2) SiO 2 Film preparat...

Embodiment 2

[0048] Embodiment 2: The difference between this embodiment and 1 is that the photosensitive SiO 2 When the sol is prepared, the composition and proportion of the sol change, namely:

[0049] TEOS:H 2 O:HCl:EeOH:Ph=1:3:0.1:30:1

[0050] TEOS:---Ethyl Orthosilicate (Si(OC 2 h 5 ) 4 ) is the basic raw material to generate SiO2

[0051] EeOH:----ethanol (C 2 h 5 OH) solvent

[0052] Ph:---Philoline (C 12 h 8 N 2 ) Chemical modifiers that form photosensitive chelates

[0053] h 2 O---water is the basic raw material for water addition reaction with TEOS

[0054] HCl---hydrochloric acid is a catalyst to accelerate the reaction.

[0055] Others are all the same as embodiment 1, and the purpose of embodiment 1 can be reached equally.

Embodiment 3

[0056] Embodiment 3: The difference between this embodiment and 1 is that the photosensitive SiO 2 When the sol is prepared, the composition and proportion of the sol change, namely:

[0057] TEOS:H 2 O:HCl:EeOH:Ph=1:2:0.2:40:2

[0058] TEOS:---Ethyl Orthosilicate (Si(OC 2 h 5 ) 4 ) is the basic raw material to generate SiO2

[0059] EeOH:----ethanol (C 2 h 5 OH) solvent

[0060] Ph:---Philoline (C 12 h 8 N 2 ) Chemical modifiers that form photosensitive chelates

[0061] h 2 O---Water reacts with TEOS to generate raw materials

[0062] HCl---hydrochloric acid is a catalyst to accelerate the reaction.

[0063] Others are all the same as embodiment 1, and the purpose of embodiment 1 can be reached equally.

[0064] Of course, the composition and proportion of its sol can also be adjusted, such as TEOS:H 2 O:HCl:EeOH:Ph=1:2.5:0.15:25:1.5 or TEOS:H 2 O: HCl: EeOH: Ph = 1: 3.5: 0.2: 40: 1, ... within the range described in the technical solution, the purpose of Ex...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a method for preparing light-sensitive SiO2 gel film and method for producing its microfine graph. In said ivnention, sol-gel method is adopted to prepare film, and added with chemical dressing agent to make it and Si form photosensitive chelate, when this film is irradiated by UV ray, the photosensitive chelated can be decomposed so as to make the dissolution property of said film produce change in the organic solvent, and can conveniently obtain the microfine graph of SiO2 film. It can be used for preparing refractive index modified derivative element, for example for preparing reflective index modified grating.

Description

1. Technical field [0001] The present invention relates to SiO 2 A kind of photosensitive sol, gel thin film and its preparation method of thin-film micro-patterning technology, and further relates to a kind of optical diffraction components such as grating and beam splitter that can be applied in the field of optical communication, or applied to microelectronics and Fabrication of grooved substrates in the field of optoelectronics, etc. 2. Background technology [0002] With the rapid development of the optical communication industry, higher requirements are put forward for integrated optical components such as beam splitting and combining, wavelength division multiplexing, and SiO 2 Thin films have become one of the most important optical films in integrated optics due to their good light transmission and low light loss properties. However, in the specific integrated optical circuit, it is often necessary to combine SiO 2 Thin films are fabricated into strip waveguides ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/004G03F7/16
Inventor 赵高扬赵桂荣胡雄伟
Owner XIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com