Low-temp sintered aluminium nitride-base composition and its preparing process

An aluminum nitride-based, low-temperature sintering technology, which is applied in the field of electronic packaging materials and its manufacturing, can solve problems such as low thermal conductivity and affect the reliability of electronic devices, and achieve the goals of improving thermal conductivity, shortening sintering time, and reducing costs. Effect

Inactive Publication Date: 2002-08-14
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because of its high sintering temperature of 900-1400°C, when it is co-fired with Cu, Ag, Au and other metal conductors with low melting point (961-1083°C) and low resistance, it will affect the reliability of electronic device operation, and The thermal conductivity of the material is still low

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] 70g of AlN powder (average particle size is 7.8μm), 25g of lead borosilicate glass (main component: SiO 2 : 70wt%, PbO: 20wt%, B 2 o 3 : 3wt%, K 2 O: 7wt%, with an average particle size of 1.5 μm), and 5 g of LiF was added as a sintering aid. Add 200ml of absolute ethanol, 400g of AlN balls with an average diameter of 6mm, mix them in a plastic barrel for 24 hours, dry them, and dry press them into a green body of 30×35×12mm. The sintering is carried out in a graphite heating element furnace, and the hot-pressing mold is a rectangular graphite mold with a cross-sectional size of 30×35mm, and the inner wall of the mold is coated with BN. Flow N at 1atm during hot pressing sintering 2 Protect. The specific sintering process is as follows, the first stage is from room temperature to 650°C, the heating rate is 30°C / min, the second stage is from 650 to 1000°C, the heating rate is 10°C / min, the axial pressure is 10Mpa, and the third stage is 1000 The holding time at ℃ i...

Embodiment 2

[0019] First AlN powder is sieved, get 60g of AlN coarse powder (average particle size is 15 μm), 32g of lead borosilicate glass (main component: SiO 2 : 65wt%, PbO: 25wt%, B 2 o 3 : 5wt%, CaO: 5wt%, the average particle size is 1.7μm), adding 8g of LiF as a sintering aid. The forming and hot-pressing sintering process is the same as that in Example 1, the sintering temperature is lowered to 950° C., and the temperature is kept for 2 hours. The density of the sample after sintering is 3.04g / cm 3 , the porosity is 0.42%, and the thermal conductivity is 10.3W / mK.

[0020] Compared with the AlN-based substrate materials reported abroad for electronic packaging, the low-temperature sintered AlN-based composite materials prepared in the above two examples have the advantages shown in Table 1:

[0021] Foreign reports AlN /

[0022] Material Example 1 Example 2

[0023] borosilicate glass ceramic

[0024] Sintering temperatur...

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Abstract

A low-temp sintered AIN-base composition is prepared from AIN (50-80 wt%), lead borosilicate glass (15-50), and LiF (rest) through hot pressing and sinter, including heating and pressurizing by threestages, and holding temp at 950 or 1000 deg.C under 18-25 MPa for 2-8 hr. Its advantages include low sinter temp and density, high heat conductivity (11 W/m.k) and low cost.

Description

technical field [0001] The invention relates to a low-temperature sintered aluminum nitride (AlN)-based composite phase material and a preparation method thereof, which are mainly used for high-density microelectronic packaging and belong to the field of electronic packaging materials and their manufacturing. Background technique [0002] With the miniaturization of electronic devices, the high output of semiconductor components and the high speed of signal processing, a variety of new technologies and new structures have emerged in microelectronic packaging, such as ball grid array packaging (BGA), wafer-level module packaging ( WSP) and multi-chip package (Multi-Chip CSP), etc. The new packaging mode puts forward higher requirements for packaging materials, that is, good thermal conductivity, low dielectric constant and dielectric loss, thermal expansion coefficient matching the chip, excellent mechanical strength and processability. Alumina (Al 2 o 3 ) and beryllium ox...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C3/089C03C14/00C04B35/581C04B35/582C04B35/64
CPCC03C14/002C03C3/108
Inventor 张擎雪雒晓军李文兰庄汉锐严东生
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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