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Electroluminescent organic device

An electroluminescent device and organic light-emitting layer technology, applied in electroluminescent light sources, electric light sources, electrical components, etc., can solve the problems of reducing the luminous efficiency of the device, unbalanced carrier transmission, etc., to improve the luminous efficiency and luminous Brightness, to achieve the effect of injection balance

Inactive Publication Date: 2003-02-19
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In traditional N,N'-di-(1-naphthyl)-N,N'-diphenyl-1,1-biphenyl-4,4-diamine (hereinafter referred to as NPB) / Alq 3 In bilayer OLDs, the hole transport ability of NPB is much larger than that of Alq 3 The ability to transport electrons, thus leading to a serious imbalance in the transport of carriers in the device, thereby reducing the luminous efficiency of the device

Method used

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  • Electroluminescent organic device
  • Electroluminescent organic device
  • Electroluminescent organic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 23

[0048] The ITO glass with a sheet resistance of 15Ω was cleaned and dried by boiling detergent and ultrasonic deionized water, and the film thickness of ITO was 260.0nm. Put the dried ITO glass under a pressure of 1×10 -3 In a vacuum chamber of Pa, a 10.0nm CuPc buffer layer was evaporated on the ITO film by thermal evaporation method, and the evaporation rate was 0.01nm / s. Thereafter, alternate multilayer hole transport layers (NPB / rubrene) are vapor-deposited on top 3 , wherein the evaporation rate of the NPB film is 0.2nm / s, the film thickness is 5.0nm, the evaporation rate of the rubrene film is 0.1nm / s, and the film thickness is 2.0nm. Continue to vapor-deposit a 20.0nm NPB layer on the hole transport layer as a transition layer, the evaporation rate is 0.2nm / s, and continue to evaporate the organic functional layer Al(Saph-q), and the evaporation rate is 0.2nm / s, the film thickness is 60.0nm. On the Al(Saph-q) layer, continue to evaporate the metal layer, the metal l...

Embodiment 24

[0050] The ITO glass with a sheet resistance of 100Ω was cleaned and dried by boiling detergent and ultrasonic waves with deionized water, and the film thickness of ITO was 60.0nm. Put the dried ITO glass under a pressure of 2×10 -3 In a vacuum chamber of Pa, alternate multi-layer hole transport layers (MTDATA / rubrene) are evaporated on the ITO film by thermal evaporation. 10 , where the evaporation rate of the MTDATA film is 0.2nm / s, the film thickness is 5.0nm, the evaporation rate of the rubrene film is 0.1nm / s, and the film thickness is 2.0nm. Continue to vapor-deposit a 5.0nm NPB layer as a transition layer on the hole transport layer, and the evaporation rate is 0.2nm / s, and continue to vapor-deposit an organic functional layer Alq 3 , the evaporation rate is 0.2nm / s, and the film thickness is 60.0nm. in Alq 3 The metal layer is continuously vapor-deposited on the layer, and the metal layer is sequentially composed of Mg:Ag alloy and Ag. The total evaporation rate of ...

Embodiment 25

[0052] The ITO glass with a square resistance of 60Ω was cleaned and dried by boiling detergent and ultrasonic deionized water, and the film thickness of ITO was 100.0nm. Put the dried ITO glass under a pressure of 2×10 -3 In a vacuum chamber of Pa, alternate multi-layer hole transport layers (TPD / DCJTB) were deposited on the ITO film by thermal evaporation. 4 , wherein the evaporation rate of the TPD thin film is 0.2nm / s, the film thickness is 5.0nm, the evaporation rate of the DCJTB thin film is 0.1nm / s, and the film thickness is 2.0nm. Continue to evaporate a 20.0nm TPD layer as a transition layer on the hole transport layer, and the evaporation rate is 0.2nm / s, and continue to evaporate an organic functional layer Alq 3 , the evaporation rate is 0.2nm / s, and the film thickness is 60.0nm. in Alq 3 The metal layer is continuously vapor-deposited on the layer, and the metal layer is sequentially composed of Mg:Ag alloy and Ag. The total evaporation rate of Mg:Ag is 1.5nm / s...

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Abstract

The present invention relates to a kind of organic electro luminescence part, which belongs to technical field of organic electro luminescence. Empty cave transmission layer of this part adopts organic quantum trap structure. The quantum trap transmission structure is composed by overlapping alternately two kinds of organic material layer. Therewith energy level of two kinds of material matches each other, forming momentum trap of empty cave at interface of quantum trap and forming layer singly by using dye in this organic quantum trap structure. The organic quantum trap structure that adopting on the present invention in the empty cave transmission layer can greatly control charge carrier moving in the empty cave transmission layer, realizes pouring balance that electron of luminous layer and empty-cave. Improving luminous efficiency and brightness of part.

Description

technical field [0001] The invention relates to an organic electroluminescence device, which belongs to the technical field of organic electroluminescence. Background technique [0002] Today, with the development of multimedia technology and the advent of the information society, the requirements for the performance of flat panel displays are getting higher and higher. In recent years, three new display technologies: plasma display, field emission display and organic electroluminescent display have made up for the shortcomings of cathode ray tubes and liquid crystal displays to a certain extent. Among them, organic electroluminescent displays have a series of advantages such as self-illumination, low-voltage DC drive, full curing, wide viewing angle, and rich colors. Low, its response speed can reach 1000 times that of liquid crystal display, but its manufacturing cost is lower than the liquid crystal display of the same resolution, therefore, organic electroluminescent di...

Claims

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Application Information

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IPC IPC(8): H05B33/12H05B33/14H05B33/26
Inventor 邱勇高裕弟魏鹏张德强王立铎
Owner TSINGHUA UNIV
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