Transparent metal dielectric composite material
A technology of composite materials and transparent metals, applied in the direction of conductive materials, conductive materials, circuits, etc., can solve the problems of peak transmittance decrease, high transmittance area narrowing, etc.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2003-06-25
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
Technical field:
[0001] The invention relates to a composite film material or device for electromagnetic wave signal processing, in particular to a transparent metal dielectric composite material with a symmetrical structure similar to semiconductor quantum wells. Background technique:
[0002] In the prior art, devices usually used for electromagnetic wave signal (optical signal) processing are all-optical devices or optoelectronic devices mixed with optical and electronic devices, and are mostly made of dielectric materials, semiconductor materials, and the like. Electromagnetic wave signals are divided by wavelength from short to long, including gamma rays, X-rays, ultraviolet, visible light bands, infrared, microwave, radio waves, long waves, etc. With the development of the information age, the processing of photoelectric signals is moving towards broadband and high-speed The development of the corresponding direction puts forward higher requirements for the devices and...
Examples
Embodiment Construction
[0008] Such as figure 1 As shown, the preferred mode of realizing the present invention is: the transparent metal-dielectric composite material of a kind of semiconductor quantum well structure of the present invention is made of induction layer 1,3 and functional layer 2, and described induction layer 1,3 is made of two layers respectively Transparent Dielectric Film A 1 , B 1 and B 2 、A 2 Composition, the functional layer 2 is made of metal material, the functional layer 2 is compounded between the induction layers 1 and 3, the thickness of the functional layer 2 is between 3 nanometers and 9000 nanometers, the functional layer as a single-layer metal film. Such as figure 2 As shown, the functional layer 2 may also be composed of multiple layers of metal films and dielectric films. The method of electron beam evaporation or sputtering in the prior art may be used to combine the functional layer with the inductive layer. In a preferred embodiment of the present invent...