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Mfg. method of semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, manufacturing tools, grinding devices, etc., can solve problems such as weak mechanical strength and increased CMP frictional resistance

Inactive Publication Date: 2003-10-08
HITACHI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, it can be considered that in the conventional abrasive-free polishing liquid, it is necessary to increase the frictional resistance in CMP while utilizing a surfactant to form a protective film with weak mechanical strength.

Method used

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  • Mfg. method of semiconductor device
  • Mfg. method of semiconductor device
  • Mfg. method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] The difference in characteristics between the abrasive-free polishing liquid according to the present invention and the conventional abrasive-free polishing liquid will be described focusing on polishing characteristics. As the abrasive-free grinding liquid of the present invention, as the first corrosion agent, it contains 0.15% by volume of phosphoric acid, as the second corrosion agent, it contains 0.6 volume% of lactic acid, as the first corrosion inhibitor, it contains 0.2% by weight of BTA, as The second anticorrosion agent contains 0.4% by weight of imidazole, and contains 0.05% by volume of polyacrylic acid neutralized with ammonia, hydrogen peroxide (H 2 o 2 Concentration 30% by weight) 30% by volume, the rest is deionized water. Here, when the raw material is solid, it is represented by weight%, and when it is liquid, it is represented by volume%. As the substrate to be polished, thermally oxidized SiO is formed on the surface 2 On a 4-inch silicon wafer, a...

Embodiment 2

[0079] In this example, the case of performing CMP on a copper or copper-based alloy film on a large-area substrate to be polished using the same polishing solution as in Example 1 will be described. As a substrate to be polished, an 8-inch-diameter silicon wafer was used. Form 50nm thick SiO on its surface by thermal oxidation 2 A film on which tantalum and copper or an alloy film mainly composed of copper is formed with a thickness of 50 nm and 1 μm by a known sputtering method. Then, CMP of copper or an alloy mainly composed of copper was performed under the same conditions as in Example 1. However, the flow rate of the polishing liquid was 300 ml / min. The same CMP speed was obtained for a small 4 inch diameter substrate, about 460 nm / min. In this example, it is worth noting that the in-plane distribution of the CMP rate is a very small value of ±5% or less regardless of the use of an 8-inch large-area wafer.

Embodiment 3

[0082] In this example, an example of a polishing liquid in which copper or a complex salt of an alloy mainly composed of copper is further added to the polishing liquid of the present invention is shown. Except grinding liquid, others are identical with embodiment 1. In the above embodiment, if the abrasive-free polishing liquid of the present invention is used, the friction caused by the existing abrasive-free polishing liquid can be reduced by 1 / 2. However, the absolute value of friction does not always remain at 60g / cm throughout the CMP process 2 the following.

[0083] In the description of the previous Example 1 figure 1 Among them, the reason why the friction decreases when the flow rate of the polishing liquid is small is as follows. In CMP of copper or an alloy mainly composed of copper, a large amount of reaction products are generated. The reaction product is a complex salt formed by the reaction of copper or an alloy mainly composed of copper and a corrosive ...

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Abstract

The present invention relates to a method of manufacturing a semiconductor device, which removes at least part of a metal film formed on an insulating film containing at least carbon or silicon, uses a metal film composed of copper or an alloy mainly composed of copper, and uses a polymer film. The metal film is polished with a polishing pad made of resin and a polishing liquid having a dynamic friction coefficient of less than 0.5 during polishing. The method can suppress grinding damage, peeling, sinking, and abrasion, and can perform chemical mechanical grinding on copper or an alloy mainly composed of copper. By using various anti-corrosion agents such as BTA and imidazole together in the abrasive-free polishing liquid, a protective film with excellent protective properties and easily removed by mechanical friction is formed.

Description

technical field [0001] The present invention relates to polishing of a metal film, and more particularly to a method of manufacturing a semiconductor device related to the formation of buried wiring of a semiconductor device using metal film polishing. Background technique [0002] With the high integration and high performance of semiconductor integrated circuits (hereinafter referred to as LSI), the flattening of interlayer insulating films and the formation of metal connection parts (hereinafter referred to as plugs) between upper and lower wiring of multilayer wiring In the manufacturing process of LSI such as the formation of buried wiring, chemical mechanical polishing (hereinafter referred to as CMP) is frequently used (refer to US Patent No. 4,944,836 ( figure 2 A, 2B image 3 A, 3B etc.)). [0003] In addition, in order to achieve high-speed performance of LSI, instead of aluminum alloy (hereinafter referred to as Al) in the prior art, a technology of using low-re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C09G1/04C09K13/06C23F3/00H01L21/304H01L21/3205H01L21/321H01L21/768
CPCC09G1/04C09K13/06C23F3/00H01L21/3212H01L21/7684H01L21/304
Inventor 鲛岛贤二木间喜夫佐久间宪之
Owner HITACHI LTD
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