Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Methof for preparing 3-D orientation zinc oxide film

A zinc oxide film, three-dimensional orientation technology, applied in zinc oxide/zinc hydroxide, liquid chemical plating, semiconductor/solid-state device manufacturing, etc., can solve the problems of high reaction temperature, complex equipment, low efficiency, etc. Low, good uniformity and high efficiency

Inactive Publication Date: 2003-10-22
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These gas-phase methods have the disadvantages of high reaction temperature, complex equipment, high cost, and low efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methof for preparing 3-D orientation zinc oxide film
  • Methof for preparing 3-D orientation zinc oxide film
  • Methof for preparing 3-D orientation zinc oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] ①In a 100mL tetrafluoroethylene plastic bottle, dissolve 0.01mol zinc nitrate and 0.002mol ammonium chloride in 95mL deionized water, stir until completely dissolved, then add 5ml 25% ammonia water, continue stirring while adding, the solution is clear Afterwards, a reaction liquid for growing a zinc oxide film is prepared.

[0018] ②Immerse a quartz substrate with a length of 50mm and a width of 20mm into boiling concentrated sulfuric acid, soak for 10 hours, then immerse in acetone solution, ultrasonicate for 30 minutes, rinse with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0019] ③Immerse the quartz substrate processed according to step ② into the reaction solution prepared according to ①, soak for 30 minutes, then place the reaction bottle in an oil bath, and raise the reaction temperature to 95°C at a speed of 10°C / min , keep for 30 minutes. The quartz substrate is then immersed in ice water to cool. After cooling, immerse th...

Embodiment 2

[0022] ①In a 100mL tetrafluoroethylene plastic bottle, dissolve 0.01mol zinc acetate and 0.002mol ammonium chloride in 95mL deionized water, stir until completely dissolved, then add 5ml 25% ammonia water, continue stirring while adding, the solution is clear Afterwards, a reaction liquid for growing a zinc oxide film is prepared.

[0023] ②Immerse a glass piece with a length of 50mm and a width of 20mm into boiling concentrated sulfuric acid, soak it for 10 hours, then immerse it in acetone solution, ultrasonicate it for 60 minutes, rinse it with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0024] ③Immerse the glass substrate treated according to step ② into the reaction solution prepared according to ①, soak for 60 minutes, then place the reaction bottle in an oil bath, and raise the reaction temperature to 97°C at a speed of 20°C / min , keep for 60 minutes. The glass substrate is then cooled by immersing it in a bath of ice water. After ...

Embodiment 3

[0026] ①In a 100mL tetrafluoroethylene plastic bottle, dissolve 0.01mol zinc nitrate and 0.002mol ammonium nitrate in 95mL deionized water, stir until completely dissolved, then add 5ml of 25% ammonia water, continue stirring while adding, after the solution is clarified A reaction solution for zinc oxide thin film growth was prepared.

[0027] ② Immerse a quartz plate with a length of 50mm and a width of 20mm into boiling concentrated sulfuric acid, soak it for 8 hours, then immerse it in acetone solution, ultrasonicate it for 45 minutes, rinse it with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0028] ③Immerse the quartz substrate processed according to step ② into the reaction solution prepared according to ①, soak for 45 minutes, then place the reaction bottle in an oil bath, and raise the reaction temperature to 94°C at a speed of 15°C / min , keep for 45 minutes. The quartz substrate is then immersed in ice water to cool. After coolin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

A preparation method for three-D orientation zincite film is first of all to dissolve zincic salt, ammonia water, and amine salt in deionized water in a certain proportion to form film growing reaction liquid, then, to immerse the processed baseplate in a prepared film growing reaction liquid for 30-60 minutes with temperature of 94-97 deg.C to get densified zincite film with 3-D array after 30-60 minutes reaction. The film is composed of 3-D array micrometer rods with the mean size of 200 nm, 5 um long.

Description

Technical field: [0001] The invention relates to a method for preparing a three-dimensional oriented zinc oxide film, in particular to a chemical solution method for preparing the zinc oxide film. The invention belongs to the technical field of inorganic thin film preparation. Background technique: [0002] Zinc oxide thin film is a good semiconductor material. It has good photoelectric function due to its large energy gap width (similar to gallium nitride), so it can be used in gas sensitive materials, luminescent materials, photoelectric conversion materials, varistor materials, etc. The field has broad application prospects. ZnO thin film materials arranged three-dimensionally according to the C-axis orientation have strong piezoelectric and piezo-optical effects, and can be used as acoustic and electrical devices, such as thin-film resonators, filters and filters on bulk acoustic wave materials and raw surface wave materials. image scanning etc. In recent years, there...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02C23C18/00H01L21/208
Inventor 王卓钱雪峰朱子康
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com