Preparation of Y-Ba-Cu-O high temperature superconductive film

Abstract

This invention provides a semiconductor device that can prevent the leakage current increases when the TFT cuts off to improve the reliability and its manufacturing method, this semiconductor device has thin film transistor (TFT), the TFT has: semiconductor layer that contains channel region, source region and drain region; the grid insulated film set in the semiconductor layer; the grid electrode that controls conductivity of the channel region; there is a tiny convex on the surface of the semiconductor layer, the lateral inclining angle of the grid electrode is greater than inclining angle of the convex of the semiconductor layer.

Description

technical field [0001] The invention relates to the field of preparation of high-temperature superconducting films, in particular to a method for preparing high-temperature superconducting yttrium barium copper oxide (YBa 2 Cu 3 o 7-δ ) thick film method. Background technique [0002] Yttrium barium copper oxide (YBa 2 Cu 3 o 7-δ ) is one of the most valuable high-temperature superconductor materials with high irreversible lines, but YBCO has the disadvantage of weak connection, so it is difficult to prepare flexible superconducting strips by sheathing method, so people use a method called The method for growing the yttrium-barium-copper-oxygen superconducting film on the metal substrate of the second type of strip material; and directly growing the yttrium-barium-copper-oxygen superconducting film on the metal, the metal will diffuse into the conductor layer to deteriorate the superconductivity, resulting in Critical current density (J c )re...

AI Technical Summary

Problems solved by technology

The composition and structure of the yttrium-barium-copper-oxygen superconducting layer grown by the PLD method are very good, but its growth rate is slow, the growth cost is expensive, and the difficulty of preparation increases rapidly as the film area becomes larger and thicker, as shown in the literature High critical current density YB 2 Cu 3 o 7-δ thick films using ion beam assisted deposition MgO bi-axially oriented template layers on nickel-based superalloy substrates, Journal of Materials Research--August 2001--Volume 16, Issue 8, pp.2175-2178. Introduced; using electron beam Co-evaporation method was used to prepare yttrium barium copper oxide film on RABiTS substrate, as described in the literature Electronbeam co-evaporation of Y-BaF2-Cu precursor films for YBa2Cu3O7-y coated conductors, supercond.Sci.Technol.14(April 2001) 218-223 Yes, but the electron gun and heat source used in this method need ultra-high vacuum, and the growth of high-temperature superconducting film requires oxygen, and the electron gun equipment must use high voltage, which makes the equipment of this method complicated and expensive. In addition, this method Generally, post-annealing treatment is required, and it is not suitable for the preparation of high-temperature superconducting thick films

In short, the above methods are not suitable for the preparation of high-temperature superconducting thick films, and cannot simply and quickly grow yttrium-barium-copper-oxygen superconducting tapes in batches.

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