Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preventing tungsten plug corrosion

A manufacturing method and wire technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of wire corrosion and long time, and achieve the effect of preventing corrosion

Inactive Publication Date: 2004-07-28
MACRONIX INT CO LTD
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Immersing the substrate in a neutral ionic solution can effectively remove the accumulated charge on the surface of the wire. However, although this method can protect the tungsten plug from electrochemical corrosion, it will make the wires of the internal connection on the surface of the tungsten plug Corrosion (i.e. wire metal reacts with salt or electrolyte in neutral ionic solution)
Moreover, in the known method, the time for treating the substrate with a neutral solution (such as an electrolyte) or deionized water is not only lengthy, but after the substrate is soaked, an additional cleaning-drying step is necessary to remove the solution remaining on the substrate (i.e. salt / electrolyte)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preventing tungsten plug corrosion
  • Method for preventing tungsten plug corrosion
  • Method for preventing tungsten plug corrosion

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Figure 2A to Figure 2D A cross-sectional view of a manufacturing process of a semiconductor device according to an embodiment of the present invention is shown.

[0023] Please refer to Figure 2A , A substrate 200 is provided, an inner dielectric layer 202 has been formed on the substrate 200, and an adhesion layer 204 and a tungsten plug 206 are formed in the inner dielectric layer 202. Of course, other components or metal wires are formed in the substrate 200, but for the sake of simplicity, they are not shown in the drawings. Then, a metal layer 208 and a patterned photoresist layer 210 are sequentially formed on the substrate 200. The material of the metal layer 208 is, for example, aluminum alloy, copper metal, or copper alloy.

[0024] Next, please refer to Figure 2B , Placing the substrate 200 in an etching device, using the patterned photoresist layer 210 as a mask, and removing a part of the metal layer 208 until the surface of the inner dielectric layer 202 is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method to prevent wolfram (W) plug from corroding in the semiconductor component making technique, wherein the W plug has been formed on the substrate and coupled with the lead wire formed on the substrate. Then, it uses discharger to process the substrate, eliminating the charges accumulated on the lead wire surface in the lead wire etching making technique. Then, it makes wet cleaning.

Description

Technical field [0001] The present invention relates to a semiconductor manufacturing process, and more particularly to a method for preventing corrosion of tungsten plugs. Background technique [0002] With the continuous miniaturization of the line width of semiconductor components, high-speed, multi-function, high-component integration, low power consumption and low-cost extremely large-scale integrated circuit chips can be mass-produced. Due to the miniaturization of semiconductor components and the increase in integration, the number of interconnects continues to increase, making the chip surface unable to provide enough surface area to accommodate the increasing number of interconnects. In order to solve this problem, a multi-metal interconnect structure has been proposed, and it has become a necessary method for integrated circuit manufacturing technology. [0003] In the multi-metal interconnect manufacturing process, after the metal tungsten plug is completed, the next l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 游宗龙马思尊张国华
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products