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Method of preparing BaxSr1-xTiO3 thin film using heat plasma mist state gasification process

A technology of thermal plasma and thin film, applied in gaseous chemical plating, metal material coating process, melt spraying, etc., can solve the problems of preparation and acquisition difficulties, and achieve low preparation cost, high deposition rate, and short film preparation cycle short effect

Inactive Publication Date: 2004-12-22
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the potential application prospects, there are many methods for preparing BST thin films, such as sputtering, laser flash evaporation, vapor deposition and sol-gel method, etc. The source materials used are BST ceramic targets, powders or metal organics. and difficult to obtain

Method used

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  • Method of preparing BaxSr1-xTiO3 thin film using heat plasma mist state gasification process

Examples

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Embodiment 1

[0055] The present invention uses Ba(NO 3 ) 2 and Sr(NO 3 ) 2 is the source of Ba and Sr, Ti(SO 4 ) 2 As the Ti source, the raw material Ba(NO 3 ) 2 / Ti(SO 4 ) 2 The molar ratio is adjusted to 3:1, with excess Ba 2+ Precipitated Ti(SO 4 ) 2 introduced in SO 4 2- ions, and then add an appropriate amount of Sr(NO 3 ) 2 , stirred well, the resulting BaSO 4 The precipitate settles overnight, and the filtrate obtained by filtration is the nitrate precursor of BST. Ba 0.6 Sr 0.4 TiO 3 / Pt / Ti / SiO 2 / Si thin film, the prepared thin film is very flat and dense, the particles in the thin film are spherical, the size is uniform, about 40nm, and the thickness of the thin film is 400nm. X-ray energy scattering quantitative analysis results show that the actual composition of the film can be expressed as Ba 0.59 Sr 0.42 TiO 3 , which is very close to the target composition. The prepared film has a dielectric constant of 821 at 100kHz. When the applied electric field ...

Embodiment 2

[0057] The present invention uses Ba(NO 3 ) 2 and Sr(NO 3 ) 2 is the source of Ba and Sr, Ti(SO 4 ) 2 As the Ti source, the raw material Ba(NO 3 ) 2 / Ti(SO 4 ) 2 The molar ratio is adjusted to 3:1, with excess Ba 2+ Precipitated Ti(SO 4 ) 2 introduced in SO 4 2- ions, and then add an appropriate amount of Sr(NO 3 ) 2 , stirred well, the resulting BaSO 4 The precipitate settles overnight, and the filtrate obtained by filtration is the nitrate precursor of BST. By adjusting the addition ratio of Ba and Sr, 0.05M of Ba with different Ba components x was configured x Sr 1-x TiO 3 (x=0.2, 0.4, 0.6 and 0.8) Nitrate solution precursors. Ba x Sr 1-x TiO 3 thin film, with the increase of the Ba composition x value in the thin film, the ABO of the perovskite structure 3 The gradual substitution of Sr by Ba at the A site, the prepared Ba x Sr 1-x TiO 3 The lattice constant c of the film increases linearly. The Sr-excess Ba 0.58 Sr 0.7 1TiO 3 The permittivity...

Embodiment 3

[0059] The present invention uses Ba(NO 3 ) 2 and Sr(NO 3 ) 2 Source for Ba and Sr, TiOSO 4 As the Ti source, the raw material Ba(NO 3 ) 2 / TiOSO 4 The molar ratio is adjusted to 2:1, with excess Ba 2+ Precipitated TiOSO 1 introduced in SO 4 2- ions, and then add an appropriate amount of Sr(NO 3 ) 2 , stirred well, the resulting BaSO 4 The precipitate settles overnight, and the filtrate obtained by filtration is the nitrate precursor of BST. By adjusting the addition ratio of Ba and Sr, 0.05M of Ba with different Ba components x was configured x Sr 1-x TiO 3 (x=0.2, 0.4, 0.6 and 0.8) Nitrate solution precursors. Using MPE technology, prepared Ba with different Ba components x Sr 1-x TiO 3 (x=0.2, 0.4, 0.6 and 0.8) films.

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Abstract

A thermal plasma-atomizing-gasifying process for preparing BaxSr1-xTiO3 film (BST film) includes choosing Ba, Sr and Ti sources from Ba(NO3)2, BaCl2, Sr(NO3)2, SrCl2, TiCl4, Ti(SO4)2 and TiOSO4, preparing the aqueous solution of nitrate and the aqueous solution of chloride, preparing the solution of BaxSr1-xTiO3, ultrasonic atomizing, carrying the atomized liquid drops, in RF induced plasmas by the mixture of argon gas and oxygen gas, ultrahigh-temp gasifying, and depositing on the substrate heated by plasma tail flame to form BST film. Its advantages are smooth and compact, and high tuning rate of its dielectric constant (43%).

Description

technical field [0001] The present invention relates to a Ba x Sr 1-x TiO 3 Thin-film method, particularly relates to a kind of thermal plasma mist gasification to prepare Ba x Sr 1-x TiO 3 thin film method. Background technique [0002] Ba x Sr 1-x TiO 3 (BST for short) is BaTiO 3 and SrTiO 3 The solid solution, its Curie temperature can be changed by adjusting the Sr component content, BST has a high dielectric constant, low dielectric loss and leakage current, and its dielectric constant can be tuned by an external electric field, so it can be used in dielectric phase shifters , dynamic random access memory (DRAM), pyroelectric infrared detectors, and H 2 detectors etc. Due to the potential application prospects, there are many methods for preparing BST thin films, such as sputtering, laser flash evaporation, vapor deposition and sol-gel method, etc. The source materials used are BST ceramic targets, powders or metal organics. and difficult to obtain. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/448C23C16/513
Inventor 黄晖姚熹
Owner XI AN JIAOTONG UNIV