Ce-doped lutetium gadolimium silicate submicron image transparent screen and its preparation method
A fluorescent screen, lutetium silicate technology, applied in the direction of discharge tube fluorescent screen, tube/lamp screen manufacturing, chemical instruments and methods, etc., can solve the problems of long light decay time, effective atomic number, low density, low resolution, etc. The effect of increasing the resolution
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Embodiment 1
[0035] Embodiment 1: (Ce 0.001 Lu 0.999 ) 2 SiO 5 / Lu 2 SiO 5 , transparent fluorescent screen
[0036] The selected resistance heating liquid phase epitaxy furnace is as figure 1 In the shown device, the crucible 9 in the main body furnace 101 is a platinum crucible. Polycrystalline raw material (Ce 0.001 Lu 0.999 ) 2 SiO 5 with co-solvent (PbF 2 :PbO:PbO 2 =55wt%: 15wt%: 30wt%) is (Ce 0.001 Lu 0.999 ) 2 SiO 5 / (PbF 2 -PbO-PbO 2 ) = 0.10, weigh a total of 500g, mix evenly and put it into a platinum crucible 9 of 80×50mm; according to process step , the size is 30×0.03mm, and the crystal plane direction is (010) Lu 2 SiO 5 Place the substrate 8 in the jig 7, put the jig 7 into the bottom end of the rotating pull rod 6, adjust the position of the crucible 9 and the substrate wafer 8 to make them coaxial, and both are in the center of the main furnace body 101; follow the above steps Heat the furnace body 101 to 1200°C to melt the raw materials and flux t...
Embodiment 2
[0038] Embodiment 2: (Ce 0.01 Lu 0.99 ) 2 SiO 5 / Lu 2 SiO 5 Transparent fluorescent screen
[0039] (Ce 0.001 Lu 0.999 ) 2 SiO 5 Polycrystalline material and co-solvent Li 2 Mo 2 o 7 Y by weight percentage 0.9999 Ce 0.0001 AlO 3 / Li 2 Mo 2 o 7 =0.40 proportioning weighed a total of 500g, according to step in the above-mentioned embodiment 1, the size is 20 × 0.03mm, the crystal plane direction is (001) Lu 2 SiO 5 The substrate 8 is placed in the fixture 7, and the fixture 7 is loaded into the bottom end of the rotating pull rod 6, and the positions of the crucible 9 and the substrate wafer 8 are adjusted to be coaxial, and they are all located in the center of the main furnace body 101; In Example 1, raise the temperature of the furnace body 101 to 1200°C, melt the raw materials and flux to form a saturated solution 10, and after keeping the temperature at 1200°C for 5 hours, gradually lower and rotate the lifting rod 6 according to in the above-mentione...
Embodiment 3
[0040] Embodiment 3: (Ce 0.005 Y 0.5 Lu 0.495 ) 2 SiO 5 / (Y 0.5 Lu 0.5 ) 2 SiO 5 Transparent fluorescent screen
[0041] (Ce 0.005 Y 0.5 Lu 0.495 ) 2 SiO 5 Polycrystalline material and co-solvent K 2 Mo 2 o 7 By weight percentage is (Ce 0.005 Y 0.5 Lu 0.495 ) 2 SiO 5 / K 2 Mo 2 o 7 =0.30 proportioning is weighed totally 500g, according to the step in the above-mentioned embodiment 2, the (Y 0.5 Lu 0.5 ) 2 SiO 5 The substrate 8 is placed in the fixture 7, and the fixture 7 is loaded into the bottom end of the rotating pull rod 6, and the positions of the crucible 9 and the substrate wafer 8 are adjusted to be coaxial, and they are all located in the center of the main furnace body 101; In Example 2, raise the temperature of the furnace body 101 to 1100°C, melt the raw materials and flux to form a saturated solution 10, and after keeping the temperature at 1100°C for 5 hours, gradually lower and rotate the lifting rod 6 according to in the above-ment...
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