Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High thermal conductive and high air-tightness packaging material of film and preparation method

A thin-film packaging and high-air-tight technology, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poorer thermal conductivity and gas barrier properties than the latter, and achieve high visible light transmittance, Low thermal expansion coefficient and the effect of maintaining visible light transmittance

Inactive Publication Date: 2005-01-12
FUDAN UNIV
View PDF7 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Compared with the inorganic film, the polymer film has better flexibility and a stronger bond with the polymer substrate, but it is far inferior to the latter in terms of thermal conductivity and gas barrier property. This is the source of polymer and small molecule materials. The inevitable result of self-structure, and diamond-like carbon (DLC) is unique among inorganic substances, and its excellent properties are better than inorganic oxides and ceramics. Depositing DLC ​​on a polymer substrate forms a high thermal conductivity and It has not been reported that high-density thin film encapsulation materials are used for encapsulation of organic thin film diodes and thin film displays

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Clean the surface of the polyimide PI film with acetone and deionized water in an ultrasonic cleaner, put it into a plasma-enhanced chemical vapor deposition system (PECVD), and pass CH 4 Gas, carry out plasma enhanced chemical vapor deposition reaction, take it out after 15 minutes, during this process, the following process parameters should be controlled: RF source frequency 13.56MHz, RF source power range 50~150W, pressure less than 7.5×10 -5 Torr, gas flow rate range 20 ~ 80sccm. That is, a dense DLC film (type A) is formed on the PI substrate with a film thickness of about 200nm. The thermal conductivity of the formed PI composite film is about 180% higher than that of PI without DLC, and the oxygen transmission rate and water vapor transmission rate are reduced by 100 times. This high thermal conductivity and air-tight film packaging material encapsulates a multilayer organic thin film display containing a cathode, a hole transport layer, a light-emitting layer,...

Embodiment 2

[0022] Others are as in Example 1, the organic thin film diode is packaged, and compared with the device prepared under the same conditions and the same process with PI without DLC coating as the packaging material, the luminous life of the device is extended by about 110%.

Embodiment 3

[0024] The deposition on the surface of the polymer PI thin film is as in Example 1, and the side where the DLC is deposited is the same as in Example 1, and then plasma-enhanced chemical vapor deposition is carried out to prepare a B-type sandwich with a dense DLC film on both sides of the PI substrate. Composite thin film packaging material, the film thickness is about 200nm. Compared with PI without DLC coating, the thermal conductivity of this B-type sandwich material increases by about 190%, and the oxygen transmission rate and water vapor transmission rate decrease by 800 times. This extremely high thermal conductivity and airtight thin film packaging material is used to package thin film displays. Compared with the device made of PI without DLC coating as the packaging material under the same conditions and the same process, the luminous life of the device is extended by about 135%. .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A film material is prepared by using polymer as backing material and forming multilayer composite film for packaging film of diamoundloid film through vapour hase surface deposition. the thickness of diamoundloid film is 50-500 nm as its structure can be two layers structure or three layers structure or composite structure of the two but nine layers is the maximum. The vapour phase surface diposition can be chemical and physical vapour phase diposition.

Description

technical field [0001] The invention belongs to the technical field of thin film materials, and in particular relates to a multilayer composite thin film packaging material with good heat dissipation and good barrier properties to oxygen and moisture and a preparation method thereof. The thin film material is suitable for the packaging of thin film diodes and thin film displays based on organic light-emitting materials. Background technique [0002] In information display technology, organic electroluminescence display and its display device (OLED) achieve the purpose of light emission and display by driving organic semiconductor thin film with current. Compared with liquid crystal display (LCD), this new display technology has more Thinner and lighter, active luminescence (neither backlight is required), wide viewing angle, high definition, fast response, low energy consumption, excellent low temperature and shock resistance, potential low manufacturing cost, flexible and e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B32B27/06C09K3/10H01L51/52H01L51/54
Inventor 黄维彭锦雯冯嘉春
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com