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Method for making T type grating through combination of X-ray etching and optical etching

An X-ray and lithography technology, which is used in the field of mixing X-ray lithography and optical lithography to make T-shaped gratings, can solve the problems that the electron beam time cannot be adapted to large-scale production, and the electron beam lithography is complicated.

Inactive Publication Date: 2005-01-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

Electron beam lithography is generally used to produce deep submicron grids. As we all know, electron beam lithography is very complicated, and the scanning time of electron beams cannot meet the requirements of mass production.

Method used

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  • Method for making T type grating through combination of X-ray etching and optical etching
  • Method for making T type grating through combination of X-ray etching and optical etching
  • Method for making T type grating through combination of X-ray etching and optical etching

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Experimental program
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Embodiment

[0026] Such as diagram 2-1 As shown, first coat the underlying X-ray photoresist 202 on the PHEMT or MESFET chip 201, the thickness of the photoresist is between 150-300nm, and the photoresist 202 can be PMMA or ZEP 520 or UVIII.

[0027] Such as Figure 2-2 As shown, the X-ray lithography method exposes the underlying X-ray photoresist 202 .

[0028] Such as Figure 2-3 As shown, the top layer of optical photoresist 203 is coated. The optical photoresist can be S9912 or I-line adhesive, and the thickness of the adhesive is 1000-1500 nm.

[0029] Such as Figure 2-4 As shown, the photolithography method exposes the top photoresist, and develops the top photoresist to obtain the wide gate pattern 204 .

[0030] Such as Figure 2-5 As shown, develop the underlying X-ray photoresist to obtain the gate groove pattern 205, use oxygen plasma to prime the glue for 40 seconds, and the oxygen flow rate is 20 sccm, then soak in phosphoric acid: deionized water=1:10 for 50 seconds,...

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Abstract

It is process method for T-shaped grating by X-ray etching and optics etching and its process steps are the following:1,to coat a base X-ray etching glue on the semi-conductive base slice; 2, to expose the base X-ray etching glue by X-ray etching method ; 3, to coat top optics etching glue; 4, to expose the top optics etching glue by optics etching method; 5, to develop the top optics etching glue to get wide-grating graph ; 6, to develop the base X-ray etching glue to get grating trough graph; 7, to vaporize and stripe the grating metal and accomplish the process of T-shaped grating.

Description

technical field [0001] The invention belongs to the field of microfabrication in semiconductor technology, and particularly relates to a method for manufacturing T-shaped grids by mixing X-ray lithography and optical lithography. Its characteristics do not need to adopt the low-efficiency and high-cost electron beam exposure method, the production efficiency is very high, the process is very stable, and it has strong practical value. Background technique [0002] For Gallium Arsenide Metal Semiconductor Field Effect Transistor (GaAs MESFET), Gallium Arsenide Pseudomeric High Electron Mobility Transistor (GaAs PHEMT) and Indium Phosphide Pseudomeric High Electron Mobility Transistor (InP PHEMT), in order to increase their cut-off frequency , the gate length must be shortened. In order to reduce the gate resistance while shortening the gate length, it is usually necessary to adopt a T-shaped gate structure. Electron beam lithography is generally used to fabricate deep submicr...

Claims

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Application Information

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IPC IPC(8): G03F7/00H01L21/027
Inventor 谢常青叶甜春陈大鹏李兵
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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