Organic light-emitting device employing doped hole transporting layer and/or hole injecting layer
A technology for organic light-emitting devices and hole injection layers, which can be used in semiconductor/solid-state device manufacturing, household components, light-emitting materials, etc., and can solve problems such as impact and unfavorable luminous efficiency.
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Embodiment 1
[0045] The anode is formed on the substrate using ITO (Indium Tin Oxide). On the substrate on which ITO has been formed: cleaning; 15 minutes UV-O 3 Treatment; coating with a mixed solution of BFE (obtained from Dow Chemical Company) and 5 wt % of 9,10-dicyanoanthracene (hereinafter referred to as "DCA") at an appropriate rotation speed and a thickness of 30 nm; and heat treatment. Thus, a hole injection layer was formed. The electron affinity of BFE is 2.46eV and that of DCA is 3.2eV.
[0046] On the substrate on which the hole injection layer has been formed, a hole transport layer, an emission layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a cathode are sequentially formed, and sealed with a hygroscopic agent and a glass cover the substrate.
[0047] 30 nm of IDE320 (from IDEMITSU COMPANY) was used as the hole transport layer, and 20 nm of IDE140 (from IDEMITSU COMPANY) containing 6 wt% of IDE105 was used as the emission laye...
Embodiment 2
[0049] An organic light-emitting device was prepared in the same manner as in Example 1, except that a hole transport layer was not formed.
Embodiment 3
[0061] Prepare an organic light-emitting device in the same manner as in Example 1, except that the mixed solution of BFE and 5wt% DCA is coated with a thickness of 25nm on the substrate on which ITO has been formed to form a hole injection layer, and then A hole transport layer with a thickness of 25 nm was formed on the hole injection layer using IDE320.
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