Prepn process of metal oxide and sulfide nanometer linear array

A technology of nanowire arrays and oxides, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve problems such as difficult to obtain metal oxides with high specific surface area, achieve high crystallinity, high The effect of specific surface area and broad application prospects

Inactive Publication Date: 2005-04-27
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main reason is that metal oxides (sulfides) are difficult to fill and fill in the mesoporous channels of mesoporous materials; after the hard template is dissolved, only nanowires and nanowires

Method used

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  • Prepn process of metal oxide and sulfide nanometer linear array
  • Prepn process of metal oxide and sulfide nanometer linear array
  • Prepn process of metal oxide and sulfide nanometer linear array

Examples

Experimental program
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Embodiment 1

[0041] Example 1, the synthesis of chromium oxide nanowire arrays by in-situ thermal decomposition method: 0.20 g of mesoporous silica materials (SBA-15, FDU-5 and KIT-6) that have been roasted or microwave digested were dispersed in 6.0- In 10.0g ethanol, add 0.4-0.5g nitrate precursor (Cr(NO 3 ) 3 9H 2 O). Stir at room temperature for 2 hours, then evaporate ethanol to dryness at 40°C. The composite material is placed in a muffle furnace and fired at 350° C. for 2-4 hours to decompose nitrates to produce corresponding oxides. SiO after the above-mentioned roasting 2 / Cr 2 o 3 The composite material was dispersed again in 6.0-10.0 g of ethanol, and 0.2-0.3 g of nitrate was added. After stirring at room temperature for 2 hours, ethanol was evaporated to dryness at 40°C. The obtained material is calcined at 500° C. for 4-6 hours to decompose the newly added nitrate and complete the sintering and crystallization process of the material. Finally, the above materials were...

Embodiment 2

[0042] Example 2, the synthesis of tungsten oxide nanowire arrays by in-situ thermal decomposition method: 0.20g of mesoporous silicon oxide materials (SBA-15, FDU-5 and KIT-6) that had been roasted or microwave digested were dispersed in 6.0- In 10.0g ethanol, add 0.4-0.5g phosphotungstic acid (H 3 PW 12 o 40 ·nH 2 O). Stir at room temperature for 2 hours, then evaporate ethanol to dryness at 40°C. The composite material is placed in a muffle furnace and calcined at 350° C. for 2-4 hours to decompose the polyacid precursor to generate the corresponding oxide. SiO after the above-mentioned roasting 2 / WO 3 The composite material is dispersed again in 6.0-10.0 g of ethanol, and then 0.2-0.3 g of phosphotungstic acid is added. After stirring at room temperature for 2 hours, ethanol was evaporated to dryness at 40°C. The obtained material is calcined at 500° C. for 4-6 hours to decompose the newly added polyacid precursor, and to complete the sintering and crystallization...

Embodiment 3

[0043] Example 3, Synthesis of in-situ thermal decomposition of indium oxide nanowire arrays: 0.15 g of mesoporous silicon oxide materials (SBA-15, SBA-16, FDU-1, FDU-5, KIT-6) was dispersed in 5.0-8.0g ethanol, and 0.40-0.45g nitrate precursor (In(NO 3 ) 3 4.5H 2 O). After stirring at room temperature for two hours, the ethanol was evaporated to dryness at 40°C. The composite material is placed in a muffle furnace and fired at 250° C. for 2-4 hours to decompose the nitrate precursor. SiO after the above-mentioned roasting 2 / In 2 o 3 The composite material was dispersed again in 5.0-8.0 g of ethanol, and 0.25-0.35 g of nitrate was added. After stirring at room temperature for two hours, ethanol was evaporated to dryness at 40°C. The obtained material was calcined at 550° C. for 4-6 hours to decompose the newly added nitrate precursor and complete the final sintering and crystallization process of the material. The above materials were added to 20 mL of 2M sodium hydr...

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Abstract

The present invention is reverse inorganic mesoporous material template process of preparing linear nanometer metal oxide and sulfide array. The preparation process includes first adding metal salt or sulfur source to the template to mix with volatile organic solvent homogeneously, setting in the air for volatizing organic solvent; repeating the said process for many times of filling; directly sintering for decomposing and crystallizing to produce corresponding oxide and sulfide or adding alkali solution directly to make ion inside the hole canal form oxide and hydroxide precipitate; and finally eliminating inorganic template to obtain required ordered linear nanometer metal oxide and sulfide array with great specific surface area. The said process can copy the mesoscopic structure of the inorganic template, and the product has great specific surface area, single mesoporous distribution, high crystallization, excellent optical, electric and magnetic performance.

Description

technical field [0001] The invention belongs to the technical field of inorganic advanced materials, and in particular relates to a method for preparing metal oxide and sulfide nanowire arrays with different mesoscopic structures and compositions. technical background [0002] Mesoporous silica materials represented by MCM-41 and SBA-15 have a series of excellent physical and chemical properties such as highly ordered pore structure, huge specific surface area and pore volume, adjustable pore size and good thermal stability. The nature of mesoporous materials has aroused widespread interest, and the research on mesoporous materials continues to deepen and expand. At the same time, the research on non-silica-based mesoporous materials is also deepening, mainly involving transition metal oxides, sulfides, phosphates, and sulfates. Since non-silica-based mesoporous materials generally have variable valence states, in addition to being used as catalyst supports, adsorbents, and...

Claims

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Application Information

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IPC IPC(8): C01G1/02C01G1/12C30B29/62
Inventor 田博之刘晓英李彦光李想屠波赵东元
Owner FUDAN UNIV
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