Silicon carbide surface modifying method

A surface modification and silicon carbide technology, applied in the treatment of dyed polymer organic compounds, etc., can solve the problems of pollution, easy to fall off, easy to settle on the surface of silicon carbide, etc. Effect

Inactive Publication Date: 2005-07-13
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because it is bonded to the surface of silicon carbide, it is easy to fall off. In addition, the residue after the corrosion of inorganic substances is easy to settle on the surface of silicon carbide, causing pollution

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Place the silicon carbide powder in a muffle furnace at 500°C for 1 hour; after taking it out, soak it in a 1:1 mixed solution of hydrogen peroxide and concentrated sulfuric acid for 1 hour; after taking it out, rinse it with deionized water and dry it, and The coupling agent solution was reacted at 60°C for 1 hour. The coupling agent was the silane coupling agent KH550. After the reaction, the silicon carbide was put into the acetone solution, ultrasonically cleaned for 0.5 hours and centrifuged with a centrifuge, repeated twice; choose acrylic The weight percentage of the aqueous solution is 10%, the crosslinking agent is glycerol, the added amount is 0.01% of the acrylic monomer weight, and the pH is adjusted to 5 with sodium hydroxide; then the initiator is added, and the initiator is potassium persulfate. The amount is 0.01 of the weight of the acrylic monomer; the silicon carbide after centrifugation is uniformly mixed with the reaction solution and then polymerized. ...

Embodiment 2

[0015] Place the silicon carbide powder in a muffle furnace at 800℃ for 3 hours; after taking it out, soak it in a 1:2 mixed solution of hydrogen peroxide and concentrated sulfuric acid for 2 hours; after taking it out, rinse it with deionized water and dry it, and The coupling agent solution was reacted at 80°C for 2 hours, and the coupling agent was silane coupling agent KH560; after the reaction, the silicon carbide was put into the acetone solution, ultrasonically cleaned for 1 hour and centrifuged with a centrifuge, repeated 3 times; The weight percentage of the aqueous acrylic acid solution is 20%, the crosslinking agent is epichlorohydrin, the added amount is 0.15% of the weight of the acrylic acid monomer, and the pH value is adjusted to 7 with sodium hydroxide, sodium carbonate or sodium bicarbonate; then an initiator is added to initiate The agent is sodium persulfate, and the added amount is 0.05% of the weight of the acrylic monomer; the silicon carbide after centrifug...

Embodiment 3

[0017] In this method, the silicon carbide powder is first placed in a muffle furnace at 1500°C for 5 hours; after taking it out, it is soaked in a 1:3 mixed solution of hydrogen peroxide and concentrated sulfuric acid for 3 hours; after taking it out, it is washed with deionized water and dried. Then react with the coupling agent solution at 90°C for 3 hours, the coupling agent is silane coupling agent KH570; after the reaction, put the silicon carbide into the acetone solution, ultrasonically clean for 1.5 hours and centrifuge with a centrifuge, repeating 3 Second; select 25% by weight of the aqueous acrylic acid solution, the crosslinking agent is methylene bisacrylamide, the added amount is 0.05% of the acrylic monomer weight, and the pH value is adjusted to 7 with sodium hydroxide; then the initiator is added, the initiator is Ammonium persulfate is added in an amount of 0.07% of the weight of the acrylic monomer; the silicon carbide after centrifugation is uniformly mixed wi...

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Abstract

The surface modification process of silicon carbide includes: soaking silicon carbide powder in mixed solution of concentrated sulfuric acid and hydrogen peroxide solution; taking out, flushing with deionized water and stoving; reacting with coupling agent for 1-4 hr; setting silicon carbide inside acetone solution for supersonic cleaning and centrifuging for 2-5 times to obtain processed silicon carbide; adding cross-linking agent to acrylic acid aqua and regulating pH to 5-9 with sodium hydroxide, sodium carbonate or sodium bicarbonate; adding initiator to form the polymerizing precursor solution; mixing processed silicon carbide and the polymerizing precursor solution to obtain surface modified silicon carbide. The product has grafting rate of 0.6-16.2 % and water absorbing rate of 3.0-30 g/g.

Description

Technical field [0001] The invention relates to a method for surface modification of silicon carbide. Background technique [0002] Silicon carbide is an inorganic substance with high hardness, excellent high temperature strength, abrasion resistance, chemical corrosion resistance and thermal shock resistance. It is widely used in high-temperature wear-resistant structural materials, such as various mechanical seals and high-temperature structural parts. It is also considered to be one of the most promising materials for the future manufacture of gas turbines, rocket nozzles and engine parts in the aerospace and automotive industries. However, since silicon carbide is a particularly hydrophobic and high-hardness material, its surface cannot absorb moisture. The production of special-purpose functional materials, such as the use of its hardness and chemical resistance to make surface moisture-absorbing and dust-absorbing functional materials, requires improvement of its surface pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/626C09C3/10
Inventor 李志强谭颖牛艳奔郭永利张志成潘振远刘秀霞
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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