Silicon carbide surface modifying method

Abstract

The surface modification process of silicon carbide includes: soaking silicon carbide powder in mixed solution of concentrated sulfuric acid and hydrogen peroxide solution; taking out, flushing with deionized water and stoving; reacting with coupling agent for 1-4 hr; setting silicon carbide inside acetone solution for supersonic cleaning and centrifuging for 2-5 times to obtain processed silicon carbide; adding cross-linking agent to acrylic acid aqua and regulating pH to 5-9 with sodium hydroxide, sodium carbonate or sodium bicarbonate; adding initiator to form the polymerizing precursor solution; mixing processed silicon carbide and the polymerizing precursor solution to obtain surface modified silicon carbide. The product has grafting rate of 0.6-16.2 % and water absorbing rate of 3.0-30 g / g.

Description

Technical field

[0001] The invention relates to a method for surface modification of silicon carbide. Background technique

[0002] Silicon carbide is an inorganic substance with high hardness, excellent high temperature strength, abrasion resistance, chemical corrosion resistance and thermal shock resistance. It is widely used in high-temperature wear-resistant structural materials, such as various mechanical seals and high-temperature structural parts. It is also considered to be one of the most promising materials for the future manufacture of gas turbines, rocket nozzles and engine parts in the aerospace and automotive industries. However, since silicon carbide is a particularly hydrophobic and high-hardness material, its surface cannot absorb moisture. The production of special-purpose functional materials, such as the use of its hardness and chemical resistance to make surface moisture-absorbing and dust-absorbing functional materials, requires improvement of its surface pr...