Method for fast preparing single crystal tellurium in one dimension Nano structure from powder of fellurium

A nanostructure, single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of long reaction time, high temperature and high pressure, high cost, etc., and achieve the effect of simple and easy-to-obtain raw materials and mild conditions.

Inactive Publication Date: 2005-08-31
NANJING UNIV +1
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of these methods require high temperature and hig

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for fast preparing single crystal tellurium in one dimension Nano structure from powder of fellurium
  • Method for fast preparing single crystal tellurium in one dimension Nano structure from powder of fellurium
  • Method for fast preparing single crystal tellurium in one dimension Nano structure from powder of fellurium

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0015] Example 1. Preparation of one-dimensional nanostructured single crystal tellurium

[0016] Add 0.1g of tellurium powder, 1g of NaOH, and 20ml of ethylene glycol into a 100mL round bottom flask with a reflux device, heat it to boiling with a flame, keep it for 2 minutes, cool, centrifuge the resulting black solid product, and use Washed with distilled water and ethanol several times, and the obtained precipitate was vacuum-dried at room temperature to obtain black powder tellurium, 0.094 g, with a yield of 94%. Powder XRD results (see attached figure 1 ) Indicates that the product is pure hexagonal tellurium. The positions of all peaks are matched with literature values ​​[see: Joint Committee on Powder Diffraction Standards (JCPDS), File No 36-1452.]. No impurity peak was found, indicating that the purity of the product is relatively high. Through TEM photos (see attached figure 2 a) It is observed that the tellurium nanocrystals prepared in this way are single crystal tel...

Example Embodiment

[0017] Example 2. Preparation of one-dimensional nanostructured single crystal tellurium

[0018]Add 0.03g of tellurium powder, 2g of KOH, and 20ml of ethylene glycol into a 100mL round-bottomed flask with a reflux device, and place the system in a microwave oven (operating frequency 2.45GHz; power adjusted to 280W) to boil and Keep it for 3 minutes and cool. The other preparation conditions are the same as in Example 1. The black powder tellurium, 0.028 g, is also obtained, and the yield is 93%. The powder XRD results and selected area electron diffraction patterns are consistent with the results of Example 1. The TEM photos (see attached figure 2 b) Observed that its crystal morphology is a single crystal tellurium nanowire or ribbon with a diameter of 40-60 nm and a length of 2-4 μm.

Example Embodiment

[0019] Example 3. Preparation of one-dimensional nanostructured single crystal tellurium

[0020] Change the amount of tellurium powder to 0.05g, the alkali to 2gNaOH, and the solvent to be 20ml of glycerol. Place the system in a microwave oven (operating frequency 2.45GHz; power set to 280W) and heat to 280°C for 3 minutes. Cool, the other conditions of the preparation are the same as in Example 1. One-dimensional nanostructured single crystal tellurium similar to Example 1 and Example 2 was also obtained, with a yield of 0.045 g and a yield of 90%. The powder XRD results and selected area electron diffraction patterns are consistent with the results of Example 1. The TEM photos (see attached figure 2 c) Observe that its crystal morphology is a single crystal tellurium nanowire or ribbon with a diameter of 20-30 nm and a length of 600-800 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Lengthaaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

A process for quickly preparing one-dimension monocrystal Te with nano structure from Te powder includes such steps as proportionally adding AgTe powder and Ag alkali to solvent, boiling in the reactor with reflux unit, cooling, centrifugally separating black solid from solution, washing with distilled water and then alcohol, and vacuum drying at ordinary temp to obtain black powder.

Description

1. Technical field [0001] The invention relates to a method for preparing single-crystal Te with one-dimensional nanostructure. 2. Background technology [0002] Nanostructures and nanomaterials (especially one-dimensional nanostructures—rods, wires, ribbons, tubes, etc.) have received extensive attention due to their theoretical and applied importance and attractive prospects [cf.: (a) Patzke, G.R. ; Krumeich, F.; Nesper, R.Angew.Chem., Int.Ed.2002, 41, 2446. (b) Hu, J.; 435. (c) Lieber, C.M. Solid State Commun. 1998, 107, 607. (d) Yang, P.; Wu, Y.; Fan, R. Int. J. Nanosci. 2002, 1, 1.]. One of the main problems in this field is whether one-dimensional nanostructures can be fabricated easily and cheaply. Although solid-state one-dimensional nanostructures can be produced by lithographic techniques [see: Rai-choudhury, P. Handbook of Microlithography, Micromachining, and Microfabrication; SPIE Press, IEEE: NewYork, 1999.] or gas-phase chemical methods [see: (a) Levitt, A....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B7/06C30B29/02C30B29/60
Inventor 朱俊杰周泊
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap