Multi-pulse superimposing amplifier and femtosecond laser parameter chirped-pulse amplification laser
A multi-pulse and amplifier technology, applied to lasers, laser components, phonon exciters, etc., can solve the problems of inability to adjust the time length and spectrum width of pump light, complex structure, etc., and achieve supercontinuum stability and narrow spectrum , the effect of increasing flexibility
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Example Embodiment
[0030] Example 1
[0031] The structure of the multi-pulse superposition amplifier described in this embodiment is as follows figure 1As shown, it consists of a Faraday 1, a 45° rotor 2, a first high-reflection mirror 3, a gain medium I 4, a dielectric film polarizer 5, a Pockels cell 6 and a second high-reflection mirror 7, and each of the above optical elements can be Bought from the market. Among the above optical elements, the gain medium I4 has a spectral gain bandwidth of about 0.5 nm, and its amplification peak wavelength matches the center wavelength of the pulse entering the resonator; the Pockels cell 6 uses KDP crystal, and its λ / 4 delay voltage is 700 Volt. Faraday 1 and 45° rotor 2 form an optical switch for ultra-short pulse trains to enter the resonant cavity. The first high-reflection mirror 3, the gain medium I4, the dielectric film polarizer 5, the Pockels cell 6 and the second high-reflection mirror 7 form a pair A resonant cavity for pulse superposition ...
Example Embodiment
[0034] Example 2
[0035] The structure of the multi-pulse superposition amplifier described in this embodiment is as follows figure 2 As shown, the difference from Embodiment 1 is: (1) The etalon 8 is added. The etalon is a constituent element of the resonant cavity. It performs spectral filtering on ultra-short optical pulses, and its passband bandwidth is 0.02 nm, and the transmittance is 0.02 nm. The peak center wavelength is 1053 nm. (2) The etalon 8 , the gain medium I4 , the Pockels cell 6 and the dielectric film polarizer 5 are sequentially placed between the two end faces of the resonant cavity formed by the first high-reflection mirror 3 and the second high-reflection mirror 7 .
[0036] The structure of the femtosecond laser parametric chirped pulse amplification laser described in this embodiment is as follows: Image 6 As shown, the difference from Embodiment 1 is: (1) The beam splitter 10 sets the input center wavelength as λ 0 The ultrashort pulse train is d...
Example Embodiment
[0037] Example 3
[0038] The structure of the multi-pulse superposition amplifier described in this embodiment is as follows image 3 As shown, the difference from Embodiment 1 is: (1) A gain medium II9 is provided on the deriving light path of the dielectric film polarizer 5, which further amplifies the superimposed flat-top pulse derived from the resonant cavity, and its spectral gain bandwidth is 0.5 nm. (2) The dielectric film polarizer 5 , the Pockels cell 6 and the gain medium I4 are sequentially placed between the two end faces of the resonant cavity formed by the first high-reflection mirror 3 and the second high-reflection mirror 7 .
[0039] The structure of the femtosecond laser parametric chirped pulse amplification laser described in this embodiment is as follows: Figure 7 As shown, the difference from Embodiment 1 is: (1) Inject 30 pulses with a center wavelength of λ into the multi-pulse superposition amplifier 12 1 The mismatch between the resonant cavit...
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