High vacuum in-situ two-step refining process for high purity material

Abstract

The high vacuum in-situ two-step refining process for high purity material features that under high vacuum condition, one diffusion furnace with two independent heating wires is used in heating the upper part and lower part of the crucible separately so as to form different temperature distribution inside the crucible in different stages, and the crucible is heated in two steps so as to eliminate high saturated vapor pressure impurities and low saturated vapor pressure impurities separately and to obtain high purity material ultimately. The refining process has greatly reduced contamination of atmosphere on the material, high product quality, great production capacity, stable performance, no environmental pollution and other features, and is suitable for producing high purity material, especially producing high purity material with high activity.

Description

technical field [0001] The invention relates to a high-vacuum in-situ refining method for producing high-purity and ultra-high-purity materials, especially a method for removing impurities with high saturated vapor pressure and impurities with low saturated vapor pressure in two steps by controlling the temperature distribution of the crucible, which belongs to metallurgy and In the field of smelting high-purity and ultra-high-purity materials in the chemical industry. Background technique [0002] High-purity materials such as high-purity metals, high-purity non-metals, and high-purity inorganic compound materials are widely used in the preparation of compound semiconductor materials and devices, as well as in aviation, aerospace and other fields, such as zinc used in II-VI and III-V compound semiconductors. , magnesium, calcium, aluminum, arsenic, phosphorus and other metal and non-metallic materials, the purity of which should be above 99.999% (5N), otherwise too many imp...

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Problems solved by technology

[0002] High-purity materials such as high-purity metals, high-purity non-metals, and high-purity inorganic compound materials are widely used in the preparation of compound semiconductor materials and devices, as well as in aviation, aerospace and other fields, such as zinc used in II-VI and III-V compound semiconductors. , magnesium, calcium, aluminum, arsenic, phosphorus and other metal and non-metallic materials, the purity of which should be above 99.999% (5N), otherwise too many impurities will seriously affect the crystallinity and photoelectric properties of semiconductor materials, thereby greatly reducing the performance of the device

At present, the production of high-purity metals mostly adopts vacuum distillation or regional smelting methods, such as the refining methods reported in Chinese patents 98113973.6, 200320115091.0, 200320115092.5 and foreign patents KR2004022842-A, RU2236476-C1, JP10121163-A, etc., when the metal is at high temperature At the same time, the vacuum degree is generally between 10 Pa and 0.01 Pa, and there is still a lot of residual gas in the vacuum chamber, which is quite harmful to the extraction of active metals; in addition, in the process of refining high-purity metals, the separation of different impurities and The removal effect is very different, and there is no method to efficiently remove impurities with high saturated vapor pressure and low saturated vapor pressure at the same time, thus affecting the overall purification effect

In addition, some inorganic compound materials are mostly prepared by reaction methods, and there is still a lack of efficient purification methods.

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