Preparation method of gate insulation layer of polysilicon thin-film transistor by laser-annealing

Abstract

The invention relates to a manufacturing method of the gate insulation layer of laser annealing polycrystalline silicon film transistor, belonging to the semi-conductor material. The invention first arranges the non-crystalline silicon (a-Si) film with the growth thickness is 150 nm into the vacuum chamber for the dehydrogenation process; the sample after dehydrogenation process is arranged into the sample chamber; under the condition of oxygen, utilizing the quasi-molecular laser to generate the laser with energy density of 350 mJ and the frequency of 3 Hz via the light-uniform system to be transformed into the facula of 50mmí‡1mm for scanning the surface of non-crystalline silicon (a-Si) film to form a SiO2 layer in the thickness of 100 mm on said surfaceú¼ and scanning the surface of sample with the energy density of 350 mJ and under the vacuum degree is over 1 Pa to melt 50 mm a-Si film to be recrystallized into P-Si film. Said growth method via the laser annealing continuously transforms the a-Si film into the SiO2 and P-Si film on one a-Si film which can keep lower interface state density between the SiO2 and the P-Si layers.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and relates to a method for manufacturing a low-temperature polysilicon thin film transistor (LT-P-Si TFT), in particular to a method for preparing a gate insulating layer of a laser annealed polysilicon thin film transistor. Background technique [0002] Low-temperature polysilicon thin-film transistor (LT P-Si TFT) is mainly used for active driving of liquid crystal display (LCD) and organic light-emitting diode (OLED). It can not only drive display pixels, but also be used as a built-in peripheral drive circuit . The preparation of the gate insulating layer is a key manufacturing process of the thin film transistor (LTP-Si TFT), which not only requires the gate insulating layer to have good insulating properties but also requires a lower interface state between the gate insulating layer and the P-Si layer. density. [0003] The only industrial technology for low-temperature p...

AI Technical Summary

Problems solved by technology

[0005] The above two preparation methods are the P-Si thin film and SiO 2 The preparation of the thin film is divided into two processes, which increases the manufacturing process, and although various means are taken to reduce and SiO 2 The interface state density between, but after all P-Si and SiO 2 prepared by discontinuous two methods, the interface state density is still not ideal