Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for producing trimethylgallium and method for producing gallium nitride thin film

A technology of trimethyl gallium, manufacturing method, applied in chemical instruments and methods, gallium/indium/thallium compound, semiconductor/solid-state device manufacturing, etc.

Inactive Publication Date: 2011-12-14
SUMITOMO CHEM CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] It is well known that impurities (eg, inorganic silicon) contained in organometallic compounds used as raw materials can degrade the quality of thin film semiconductors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing trimethylgallium and method for producing gallium nitride thin film
  • Method for producing trimethylgallium and method for producing gallium nitride thin film

Examples

Experimental program
Comparison scheme
Effect test

example

[0055] The present invention is explained by referring to the following examples and comparative examples, but the present invention should not be limited to these examples and comparative examples.

[0056] (analysis of crude TMA)

[0057] With respect to organosilicon compounds, crude TMA(1), TMA(2) and TMA(3) of different suppliers and grades were analyzed.

[0058] Dilute 11.3g TMA (1) with 143.6g xylene, and mix in the hydrolysis container that is filled with 80ml acid solution, this acid solution is the hydrochloric acid of 36% by weight diluted to half, drop into this TMA solution diluted through xylene To hydrolyze TMA, wherein the temperature of the hydrolysis solution is maintained at about -5 to -20° C. by cooling and adjusting the dropwise amount of TMA. Absorb the gas generated by hydrolysis with an absorption vessel filled with 30ml xylene. After the TMA addition was complete, the solution was stirred for about 10 minutes to complete the hydrolysis.

[0059] A...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides trimethylgallium and a method for producing the trimethylgallium. The trimethylgallium has a total organosilicon compound content of less than 0.1 ppm; and the method comprises: hydrolyzing trimethylaluminum as a raw material; extracting the contained organosilicon compound with a solvent; Trimethyltriethylsilane is quantified; trimethylaluminum having a methyltriethylsilane content of less than 0.5 ppm is selected as a raw material; purified by distillation; then reacted with gallium chloride; and then the reactant solution is distilled to obtain three Methylgallium.

Description

technical field [0001] The present invention relates to trimethylgallium, a method for producing the trimethylgallium, and a gallium nitride thin film formed from the trimethylgallium. Background technique [0002] Known nitride semiconductors having gallium nitride compound semiconductor layers are, for example, semiconductors having n-type and / or p-type layers, for example, which can be expressed by the formula In x Ga y al z N (x, y, and z are each from 0 to 1, where x+y+z=1) is represented as a gallium nitride compound layer grown on a sapphire substrate. Semiconductors having both n-type and p-type layers are used as materials for light emitting devices such as light emitting diodes emitting blue or green ultraviolet light, or laser diodes emitting blue or green ultraviolet light. [0003] By methods such as molecular beam epitaxy (hereinafter abbreviated as MBE), metal-organic vapor phase epitaxy (hereinafter abbreviated as MOVPE), hydride vapor phase epitaxy (here...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C07F5/00H01L21/20C30B25/02C30B29/40
CPCC07F5/00C30B29/406C30B25/02C01G15/00
Inventor 松原政信岛田健西川直宏门田阳一
Owner SUMITOMO CHEM CO LTD