Sputtering target and its manufacturing method

A manufacturing method and a technology of sputtering targets, which are applied in manufacturing tools, laser welding equipment, welding equipment, etc., can solve problems such as increasing costs and prolonging manufacturing time

Inactive Publication Date: 2006-06-21
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] In order to manufacture an ITO sputtering target with a given roughness as described above, after sintering and grinding to adjust the thickness, it is necess

Method used

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  • Sputtering target and its manufacturing method

Examples

Experimental program
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Effect test

Embodiment 1

[0115] Prepare In with purity greater than 99.99% 2 O 3 Powder and SnO 2 powder. Follow SnO 2 10wt%, In 2 O 3 At a ratio of 90% by weight, the powder was prepared in a total amount of approximately 1.5 kg, and a molded body was obtained by the filtration molding method. Then, the molded body was fired and sintered at 1600 in an oxygen atmosphere for 8 hours. The sintered body was processed to obtain a target with a relative density of 99.5% compared to the theoretical density.

[0116] The target was ground on a flat grinding disc with a No. 170 grindstone to adjust its thickness, and then surface treated with a YAG:Nd laser (wavelength 1064nm).

[0117] The irradiation conditions of YAG laser are: spot size φ2mm, pulse width 10ns, peak energy 320MW / cm 2 , The pulse frequency is 10Hz, and the average output of 1 pulse is 100mJ / pulse. The average effective irradiation energy is 6.4J / cm 2 .

[0118] The surface roughness Ra after the surface treatment was measured in accordance with...

Embodiment 2

[0121] The target was manufactured in the same manner as in Example 1, except that an ArF excimer laser (wavelength: 192 nm) was used instead of the YAG laser.

[0122] The irradiation conditions of the excimer laser are: spot size 3.3mm×1.5mm, pulse width 30ns, peak energy 11MW / cm 2 , The pulse frequency is 1Hz, and the average output of 1 pulse is 16mJ / pulse. The average effective irradiation energy is 0.32J / cm 2 .

[0123] The surface roughness Ra after the surface treatment was measured in accordance with the JIS B0601 standard, and the result was 1.77 μm.

[0124] In addition, the surface condition observed with a 500x scanning electron microscope (SEM) is as figure 2 Shown. There are less than 10 grinding marks in the range of approximately 240 μm in the direction perpendicular to the processing marks on the target. However, unlike the polishing traces of the comparative example described later, it was not clearly observed, but it was slightly rounded and was in a reduced s...

Embodiment 3

[0126] After grinding with No. 170 grindstone on a flat grinding disc as in Example 1, and adjusting the thickness, grinding was performed three times with No. 400, No. 600, and No. 1000. Then, a YAG:Nd laser (wavelength 1064nm) was used for surface treatment.

[0127] The irradiation conditions of YAG laser are: spot size φ2mm, pulse width 10ns, peak energy 320MW / cm 2 , The pulse frequency is 10Hz, and the average output of 1 pulse is 100mJ / pulse. The average effective irradiation energy is 3.2J / cm 2 .

[0128] The surface roughness Ra after the surface treatment was measured in accordance with the JIS B0601 standard, and the result was 0.50 μm.

[0129] In addition, the surface condition observed with a 500x scanning electron microscope (SEM) is as image 3 Shown. No linear polishing marks were observed in the range of about 175 μm×240 μm on the target.

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Abstract

The present invention provides a method for manufacturing a sputtering target, by performing surface treatment with a pulse output laser with a width of 100 μs or less, and removing burrs and grinding powder, especially dust and dust, etc. generated during grinding processing through sublimation, etc., therefore The initial arc generated when the target starts to be used can be significantly reduced, the initial stability can be improved, and the sputtering target can be manufactured at low cost.

Description

[0001] This application is a divisional application of the Chinese patent application with the application number 02130361.4, the filing date being August 16, 2002, and the invention titled "sputtering target and its manufacturing method". Technical field [0002] The invention relates to a sputtering target and a manufacturing method thereof. Background technique [0003] As one of the thin film forming methods, the sputtering method is generally known. The sputtering method is a method of sputtering on a sputtering target to obtain a thin film. Since it can form a film with a relatively good efficiency, it is widely used in industry. [0004] Especially indium oxide-tin oxide (In 2 O 3 -SnO 2 Composite oxide, hereinafter referred to as "ITO") film, because of its high transmittance to visible light and good conductivity, it is widely used as a transparent conductive film in liquid crystal display devices and heating films for preventing glass condensation, Infrared reflective fi...

Claims

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Application Information

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IPC IPC(8): B23K26/36C04B41/80C04B35/457C23C14/34
Inventor 渡边弘高桥诚一郎山崎贵史
Owner MITSUI MINING & SMELTING CO LTD
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