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Method of preparing mesoporous thin film having low dielectric constant

A low dielectric constant and mesoporous technology, applied in circuits, electrical components, organic insulators, etc., can solve problems such as complex processes and increased production costs

Inactive Publication Date: 2006-08-30
SAMSUNG CORNING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to additional moisture absorption prevention and aggregation, the conventional method is complex in process, thus increasing the production cost

Method used

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  • Method of preparing mesoporous thin film having low dielectric constant
  • Method of preparing mesoporous thin film having low dielectric constant
  • Method of preparing mesoporous thin film having low dielectric constant

Examples

Experimental program
Comparison scheme
Effect test

preparation Embodiment 1

[0099] Preparation of insulating film

[0100] The monomer of formula 6 obtained in Synthesis Example 1 was dissolved in 0.5 g of Brij-56 in 10 g of ethanol solution, and 0.86 g of 0.1 M dilute HCl aqueous solution was added thereto. The monomer solution was stirred until thoroughly homogeneous to prepare a coating solution for producing a mesoporous thin film. The coating solution was spin-coated on a silicon wafer at 3000 rpm for 30 seconds, preheated at 83° C. for 1 minute, followed by preheating on a 250° C. hot plate under a nitrogen atmosphere for 1 minute, and dried to prepare a film. The film was heat-treated at 400° C. in a vacuum atmosphere for 1 hour (rate of temperature increase: 3° C. / minute) to prepare an insulating film. Thereafter, the thickness, dielectric constant, hardness and modulus of elasticity of the resulting insulating film were measured. In addition, it was confirmed whether or not an X-ray diffraction (XRD) peak was generated. The results are sho...

preparation Embodiment 2-21

[0102] Preparation of insulating film

[0103] Each film was prepared in the same manner as in Example 1, except that the type of siloxane monomer, pore generator, solvent, and preheating and firing conditions were changed, as shown in Table 1 below. Measure the physical properties of thin films. The results are shown in Table 2 below.

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Abstract

A method of preparing a mesoporous thin film having a low dielectric constant, which includes mixing a cyclic siloxane-based monomer, an organic solvent, an acid catalyst or a base catalyst, and water, to prepare a coating solution, which is then applied on a substrate and heat cured. The mesoporous thin film of the current invention may exhibit excellent physical properties including hardness and elastic modulus, and may have a low dielectric constant of 2.5 or less, and thus, may be used to manufacture semiconductors.

Description

technical field [0001] Embodiments of the present invention generally relate to methods of preparing mesoporous films with low dielectric constants, and more particularly, to methods of preparing mesoporous films with low dielectric constants and excellent physical properties using Cyclic siloxane monomers act as structure directing agents. Background technique [0002] With the development of manufacturing semiconductor technology, semiconductor devices are manufactured in a miniaturized and increasingly highly integrated manner. However, in highly integrated semiconductors, signal transmission is blocked due to interference between metal lines. Thus, highly integrated semiconductors exhibit characteristics that depend on the speed of signal transmission through metal lines. In order to reduce the resistance and capacitance of metal lines, it is necessary to reduce the capacitance of an interlayer insulating film within a semiconductor. [0003] Although a silicon oxide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18B05D5/02C08L83/04
CPCC09D183/04H01L21/3122H01L21/31695H01L21/02216H01L21/02126H01L21/02282H01L21/02203C09D183/14H01B3/46
Inventor 宣钟白申铉振郑铉潭金知晚
Owner SAMSUNG CORNING CO LTD