Diamond substrate and manufacturing method thereof
A technology of diamond and diamond layer, applied in the field of diamond substrate and its manufacturing, can solve the problems of difficulty in processing speed, difficulty in productivity and the like
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Embodiment 1
[0079] The fabrication of this example includes the following four steps.
[0080] The first is a step of separately manufacturing a silicon substrate and a single crystal diamond seed substrate, forming a concave surface on the main surface of the silicon substrate, and mounting the single crystal diamond substrate in the concave surface of the main surface of the silicon substrate (hereinafter referred to as "installation steps"). The second is a step of forming a CVD diamond layer on the main surface of the single crystal silicon substrate and the main surface of the single crystal diamond seed substrate by chemical vapor deposition, thereby connecting to each other (hereinafter referred to as "connecting step"). The third is a step of mechanically polishing the single crystal diamond seed substrate and the CVD diamond layer grown on the main surfaces of the silicon substrate (hereinafter referred to as "polishing step"). Then the fourth step is to evaluate the finished pr...
Embodiment 2
[0097] This example includes the same four manufacturing steps as Example 1.
[0098]
[0099] Figure 7 It is a schematic diagram of the installation process. Three single crystal diamond seed substrates were used. All are type IIa single crystal diamonds obtained by high temperature and high pressure synthesis; the orientation of their major surfaces is (111); their dimensions are discs of 2 mm in diameter and 100 μm in thickness. The main surface of the silicon substrate 2 is a (111) single crystal substrate with a diameter of 2 inches and a thickness of 0.3 mm. like Figure 7 As shown in (a), three first regions 3 including concave surfaces are formed on the main surface of the silicon substrate by dry etching using a mask and high-frequency plasma. Its shape is a cylindrical shape with a diameter of 2.05 mm and a depth of 70 μm, and its side gap with respect to the single crystal diamond seed substrate is 25 μm. like Figure 7 As shown in (b), after the single cry...
Embodiment 3
[0115] In this embodiment, the CVD diamond formation conditions during are modified, and then an embodiment when the warpage amount of the diamond substrate after connection and polishing is changed is described.
[0116]
[0117] Seven samples were prepared in the same manner as in of Example 2.
[0118]
[0119] The CVD diamond formation conditions were the same as the of Example 2, except that the temperature of the silicon substrate was different. The substrate temperature was varied in the range of 800 to 1100 °C, and the warpage of the top surface (diamond surface) was set to be -20 to +80 μm and the warpage of the back surface (silicon surface) after the formation of various samples was set to be -20 to +80 μm. +20μm. Here, the thickness distribution of the diamond layer on the silicon substrate is in the range of 5 to 90 μm, respectively.
[0120]
[0121] The same as in Example 1 was performed, and the warpage of both surfaces after polishing was measured....
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Abstract
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