Ferromagnetic/antiferromagnetic multilayer membrane material with pinning and its preparing method

An antiferromagnetic layer and antiferromagnetic technology, applied in spin-exchange coupled multilayer films, magnetic layers, substrate/intermediate layers, etc., can solve poor thermal stability, damage antiferromagnetic materials and even magnetic tunnel junction properties and other issues to achieve the effect of enhancing thermal stability

Inactive Publication Date: 2006-10-11
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The pinning field of the exchange bias system based on oxide antiferromagnetic materials is too small, and they cannot be used in practical spin valves and magnetic tunnel junctions; Mn-based antiferromagnetic materials can generate relatively large pinning fields , but their cut-off temperature is at most about 400°C (document J.Magn.Magn.Mater.192, 203(1999)), and the ferromagnetic / antiferromagnetic pinning system composed of them has poor thermal stability
Recently, the magnetic tunnel junction with MgO as the barrier layer has developed rapidly, and its TMR at room temperature can be as high as 230% when annealed at a temperature of about 360 ° C (document Appl. Phys. Lett. 86, 092502 (2005)); and in the MRAM In the manufacturing process, the CMOS circuit matched with the magnetic tunnel junction also needs a processing process of about 400°C, all of which are close to or exceed the tolerance limit of the current antiferromagnetic pinning materials, and will destroy the antiferromagnetic materials and even the magnetic tunnel junction. Performance is one of the serious obstacles restricting its development

Method used

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  • Ferromagnetic/antiferromagnetic multilayer membrane material with pinning and its preparing method
  • Ferromagnetic/antiferromagnetic multilayer membrane material with pinning and its preparing method
  • Ferromagnetic/antiferromagnetic multilayer membrane material with pinning and its preparing method

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Effect test

Embodiment 1

[0042] refer to Figure 2a Shown, the structure of the ferromagnetic / antiferromagnetic multilayer film that present embodiment makes is:

[0043] Glass is used as the substrate 1; a buffer layer 2 of Ta metal is set on the glass substrate 1, and the thickness of the buffer layer 2 is 4nm; a ferromagnetic layer Co is set on the buffer layer 2. 0.9 Fe 0.1 3. Its thickness is 12nm; an antiferromagnetic multilayer film [Pt / Cr 0.5 mn 0.5 ]4 set in the ferromagnetic layer Co 0.9 Fe 0.1 3, where Pt thickness is 1.26nm, Cr 0.5 mn 0.5 The thickness is 1nm, and the total thickness is about 27nm. At this time, Cr 0.5 mn 0.5 The atomic ratio to Pt is 1. The thickness or composition of each layer mentioned above is the value when the sample is vacuum-deposited.

Embodiment 2

[0045] Through the method of preparing ferromagnetic / antiferromagnetic multilayer film pinning system in this embodiment, it is beneficial to the preparation of Co-Fe ferromagnetic / Pt-Cr 0.5 mn 0.5 The structure of the antiferromagnetic multilayer pinning material is described in detail:

[0046] This embodiment prepares Co-Fe ferromagnetic / Pt-Cr 0.5 mn 0.5 The steps of antiferromagnetic multilayer film material are as follows:

[0047] 1). First use vacuum deposition coating method, such as magnetron sputtering method, the background vacuum degree is better than 10 -5 Pa, and the deposition working pressure under the inert atmosphere is 0.5Pa, on Si or glass substrate 1, coat Ta metal buffer layer 2 successively, the thickness of deposited Ta metal buffer layer 2 is 4nm, one Co 0.9 Fe 0.1 ferromagnetic layer 3, its Co 0.9 Fe 0.1 The thickness of the ferromagnetic layer 3 is 12nm, and a layer of multilayer film [Pt (thickness is 1.26nm) / Cr 0.5 mn 0.5 (thickness is 1nm...

Embodiment 3

[0051] Such as Figure 2b As shown, the structure of preparing a ferromagnetic / antiferromagnetic multilayer film material with pinning is:

[0052] On the substrate 1 of glass, it is arranged in sequence; the buffer layer 2 of Ta metal has a thickness of 1nm; the antiferromagnetic layer multilayer film is [Pt / Cr 0.5 mn 0.5 ]4, where Pt thickness is 1.26nm, Cr 0.5 mn 0.5 The thickness is 1nm, and the total thickness is about 30nm. At this time, Cr 0.5 mn 0.5 The atomic ratio to Pt is 1; the ferromagnetic layer Co 0.9 Fe 0.1 3, its thickness is 12nm, and the protective layer 5 of Ta metal, its thickness is 3nm. The thickness or composition of each layer mentioned above is the value when the sample is vacuum-deposited. The magnetic properties of the sample in this embodiment are basically the same as those of the sample in Example 1.

[0053] The method of the ferromagnetic / antiferromagnetic multilayer film that present embodiment makes is as follows:

[0054] (1) Vacu...

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Abstract

The invention relates to a preparation method for a pinning ferromagnetic/antiferromagnetic multilayer film material comprises: with the vacuum deposition coating method and reannealing technique, preparing a buffer layer, a ferromagnetic layer and an antiferromagnetic layer on the substrate in turn, or arranging an antiferromagnetic layer on the buffer layer then a ferromagnetic layer and a protective layer. Compared with prior art, in this pinning system, it introduces (Cr1-xMnx)0.5+delta Pt0.5-delta (0.3<=x<=0.6; |delta|<0.06) as pinning material with well thermal stability, large exchange offset field and super corrosion resistance. This invention is simple and fit to industrial production.

Description

technical field [0001] The present invention relates to a ferromagnetic / antiferromagnetic multilayer film with pinning of a magnetoelectronics device: in particular to a magnetic head and a magnetic random access memory (MRAM) that can be directly applied to spin valves and magnetic tunnel junctions as the core MRAM), or a ferromagnetic / antiferromagnetic multilayer film material with pinning that can also be applied to the bottom soft magnetic layer of a perpendicular magnetic recording medium and a preparation method. Background technique [0002] The pinned ferromagnetic / antiferromagnetic multilayer film is one of the core components of the spin valve and magnetic tunnel junction, and its main function is to make the ferromagnetic layer pinned by the antiferromagnetic layer to the ferromagnetic layer. The magnetic moment direction of the layer does not change with the external magnetic field, as a magnetic reference layer (document Phys. Rev. B 43, 1297 (1991) and IEEE Cir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/32H01F10/12H01F10/26H01F41/22
Inventor 倪经蔡建旺
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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