Filament of neutralization cathode in Kaufman ion source, and method

A technology of Kaufman ion source and cathode filament, which is applied in the field of ion beams, can solve the problems that limit the wide application of Kaufman ion source and time-consuming, and achieve the effects of prolonging continuous working time, improving life, and reducing pollution

Inactive Publication Date: 2007-02-21
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Before the ion source works again, people have to break the vacuum to replace the neutralizing cathode filament of the ion source, so the continuous working time of the Kaufman ion source is limited by the life of the neutralizing filament. One of the main disadvantages of the Kaufmann ion source also limits the further wide application of
Especially when the ion source is often used in ultra-high vacuum (UHV), after breaking the vacuum to obtain UHV conditions again, the vacuum chamber needs to be baked for more than 24 hours, which is quite time-consuming

Method used

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  • Filament of neutralization cathode in Kaufman ion source, and method
  • Filament of neutralization cathode in Kaufman ion source, and method
  • Filament of neutralization cathode in Kaufman ion source, and method

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specific Embodiment approach

[0028] Specific implementation methods (taking the Φ5cm ion source as an example)

[0029] A method for manufacturing a neutralization cathode filament in a Kaufmann ion source:

[0030] 1) Wind a refractory metal tungsten (W) wire with a length of 60mm and a diameter of 0.4mm into a spiral filament, and bend it into an arc with a radius of curvature of 2.5cm for use;

[0031] 2) Remove the submerged neutralization cathode filament on the original Kaufmann ion source;

[0032] 3) Install three new helical neutralization filaments around the Kaufman ion source, the filaments are evenly distributed around the ion source and placed outside the ion beam;

[0033] 4) Connect one end of the three neutralizing cathode filaments together outside the ion source and connect to the positive pole of the filament current source, the positive pole of the current source is grounded through the ammeter, the other end of the three neutralizing cathode filaments is connected to one side of the...

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Abstract

Specially, the invention is related to neutralization cathode filament in Koffman ion source, and method. Being placed outside ion beam, the neutralization cathode filament can prevent direct sputtering from ion beam. Anode of power supply for neutralization cathode filament is connected to ground, so that filament is at negative potential. Three pieces of filament are in annular ring to round ion beam, and operation modes for switching three pieces of filament in turn are adopted outside ion source. The neutralization cathode filament possesses features of simple structure, long continuous working time, stable operation, and low pollution. The invention is widely applicable to preparing thin film material of ion beam in low energy, and ion beam etching.

Description

technical field [0001] The invention relates to the technical field of ion beams, in particular to a neutralization cathode filament in a Kaufmann ion source and a method thereof. technical background [0002] Ion beam thin film deposition and ion beam material modification technology is an important branch of the emerging development of material science. The research and promotion of ion beam technology has made great achievements. One of its signs is that ion implantation semiconductor doping has become The key process of circuit microfabrication. The ion source is a key component for generating the required ions. After decades of efforts by researchers from various countries, there are currently no less than 20 or 30 types of ion sources. Kaufman (Kaufman) ion source can generate large-area ion beams of gas elements, suitable for ion beam sputtering coating, ion beam bombardment of film layers and ion beam surface cleaning of workpieces. It is the most widely used ion be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J27/02H01J37/08
Inventor 张兴旺陈诺夫
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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