Polishing slurry, method of producing same, and method of polishing substrate

A technique for polishing slurry and particles, which is applied in the fields of polishing compositions containing abrasives, devices for extracting water, semiconductor/solid-state device manufacturing, etc., and can solve the problems of unexplained polishing particles, scratches on the surface, and polishing effects of polishing slurry Issues such as undisclosed impact conditions

Active Publication Date: 2007-04-11
K C TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, in the polishing slurry prepared by conventional technology, there are many problems in the average particle size of the polishing particles and their particle size distribution curve: such as relatively large particles, if this polishing slurry is used for the polishing of semiconductor elements with fine design requirements operation, then a limited number of surfa...

Method used

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  • Polishing slurry, method of producing same, and method of polishing substrate
  • Polishing slurry, method of producing same, and method of polishing substrate
  • Polishing slurry, method of producing same, and method of polishing substrate

Examples

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Effect test

preparation example Construction

[0046] [Preparation method of ceria polishing slurry]

[0047] 1. Preparation of ceria powder

[0048] Preparation of ceria polishing slurry, the first step: preparing ceria powder from raw materials by a solid generation method. Raw materials such as cerium carbonate are calcined to produce ceria powder, but before calcination, the moisture should be removed by drying process alone to ensure the heat transfer and manufacturability.

[0049] The performance of ceria powder depends on the calcination effect of cerium carbonate and the performance of calcination equipment. Cerium carbonate is hygroscopic and can crystallize with water, and the valence of its crystal water can be 4, 5 or 6. Therefore, the calcination effect of cerium carbonate is related to the valence of crystal water in its crystal and its water absorption. During calcination, the moisture in the cerium carbonate is removed. But as the temperature rises and heat builds up, a decarbonation reaction occurs, a...

example 1-5

[0111] Example 1-5: Effect of Calcination Temperature

[0112] (1) Preparation of cerium dioxide powder 1-5

[0113] 800g was added every time the temperature was raised, and a total of 25kg of high-purity cerium carbonate was added to the calciner for calcination for 4 hours. For examples 1-5, the rate of temperature rise and the temperature maintained are shown in the table below:

[0114] Temperature rise rate (℃ / min)

Keep temperature(℃)

Ceria powder 1

3.9

700

Ceria powder 2

4.2

750

Ceria powder 3

4.4

800

Ceria powder 4

4.7

850

Ceria powder 5

5.0

900

[0115] The polishing slurry adopts natural cooling, and the gas flows at 20m 3 / hr to effectively take away the by-product CO of calcination 2 . The calcined ceria powder was analyzed by X-ray diffraction to confirm the formation of high-purity ceria. In addition, the powder was analyze...

example 6-8

[0120] Example 6-8: The effect of grinding times

[0121] (1) Preparation of cerium dioxide powder 6-8

[0122] Adding 800g each time, a total of 75kg of high-purity cerium carbonate was added into the calciner and calcined for 4 hours at 750°C. The polishing slurry adopts natural cooling, and the gas flows at 20m 3 / hr to effectively take away the by-product CO of calcination 2 . The calcined ceria powder was analyzed by X-ray diffraction to confirm the formation of high-purity ceria.

[0123] (2) Preparation of ceria polishing slurry 6-8

[0124] To prepare ceria polishing slurry 6, 10 kg of high-purity ceria powder and 90 kg of deionized water were mixed in a high-speed rotary mixer for 1 hour or more to crystallize the ceria powder sufficiently. With this mixture, ie, a 10% by weight polishing slurry, four passes of the polishing operation can be performed. Thus, the particle size of the polishing particles is controlled within a required range and uniform dispersion...

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Abstract

The present invention relates to a polishing slurry, method of producing same, and method of polishing substrate. Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

Description

[0001] This application is a divisional application with application number 200510055087.3. technical field [0002] The present invention relates to a slurry for chemical mechanical polishing (hereinafter referred to as 'CMP'), in particular, the present invention relates to a polishing slurry, a preparation method thereof, and a polishing method of a substrate. When this polishing slurry is applied to CMP in STI (Shallow Trench Isolation) technology, it has high selectivity to the polishing rate of oxide layer and nitride layer. Since ultra-highly integrated semiconductor silicon wafers have corresponding design standards for 256M or higher D-RAM, the selectivity of polishing rate is very important. Background technique [0003] CMP is a semiconductor processing technology, that is, the polishing slurry is introduced between the clamped wafer and the polishing pad, and mechanical polishing is performed while the chemical corrosion polishes the processed surface. This meth...

Claims

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Application Information

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IPC IPC(8): C08J3/14C09G1/02H01L21/304
CPCA47B33/00B05B17/08E03B9/20
Inventor 金大亨洪锡敏全宰贤金晧性朴炫洙白雲揆朴在勤金容国
Owner K C TECH
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