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Method for producing luminous element with high-illuminating effect

A light-emitting element and manufacturing method technology, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems such as the inability to effectively remove alumina slag, and achieve the effects of avoiding fragmentation problems, increasing yield, and improving brightness

Active Publication Date: 2007-06-06
EPISTAR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this method, before laser cutting, a protective layer is coated on the cutting surface to prevent the splashed debris from damaging the cutting surface, and then the by-products produced after laser cutting the sapphire substrate are removed with potassium hydroxide etching solution, but such removal Process cannot effectively remove remelted alumina slag

Method used

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  • Method for producing luminous element with high-illuminating effect
  • Method for producing luminous element with high-illuminating effect
  • Method for producing luminous element with high-illuminating effect

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Embodiment Construction

[0031] Please refer to FIGS. 1A-1C , according to a method for manufacturing a high-luminous-efficiency light-emitting element 1 according to a preferred embodiment of the present invention, the steps include on the first surface of a substrate 10 with a first upper surface and a first lower surface. A light-emitting stack 12 is formed on the surface, wherein the light-emitting stack includes a second upper surface and a second lower surface, and the second lower surface faces the substrate 10, and a first layer is coated on the second upper surface of the light-emitting stack. a protective layer 13, cutting the light-emitting element 1 with a laser beam from the lower surface of the substrate, and placing the light-emitting element 1 with the first protective layer 13 in a heated acidic solution for a period of time, passing through the hot acidic solution, By-products are removed. In the process of laser beam cutting the light-emitting element in this embodiment, the laser b...

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PUM

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Abstract

A method for preparing luminous element with high luminous efficiency includes utilizing a laser beam to shine a wafer containing semiconductor luminous element for cutting said wafer to be chip then applying wet-acidic etching means to remove off byproduct generated by laser-beam cutting.

Description

technical field [0001] The invention relates to a method for manufacturing a light-emitting element, in particular to a method for manufacturing a light-emitting element with high luminous efficiency. Background technique [0002] The development and application of nitride light-emitting devices is quite extensive and very important. Its applications include sign light sources, electronic product backlight sources, outdoor full-color signage, white light lighting, ultraviolet light, and high-capacity optical drive applications. [0003] In the structure of the nitride light-emitting device, sapphire and silicon carbide (SiC) are the main materials of the substrate. In the process of nitride light-emitting devices, a wafer is used as a substrate and a light-emitting stack is formed thereon, and then the wafer is cut into chips. The traditional cutting method uses a diamond knife as a cutting tool to cut the substrate surface first, and then perform the fracture process. How...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 徐大正黄忠民谢明勋杨雅兰
Owner EPISTAR CORP
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