Method for producing luminous element with high-illuminating effect

A light-emitting element and manufacturing method technology, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems such as the inability to effectively remove alumina slag, and achieve the effects of avoiding fragmentation problems, increasing yield, and improving brightness

Active Publication Date: 2007-06-06
EPISTAR CORP
View PDF2 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this method, before laser cutting, a protective layer is coated on the cutting surface to prevent the splashed debris from damaging the cutting surface, and then the by-products

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing luminous element with high-illuminating effect
  • Method for producing luminous element with high-illuminating effect
  • Method for producing luminous element with high-illuminating effect

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0031] 1A-1C, according to a preferred embodiment of the present invention, a method for manufacturing a light-emitting element 1 with high luminous efficiency, the steps include the first upper surface of a substrate 10 having a first upper surface and a first lower surface A light-emitting laminate 12 is formed on the surface, wherein the light-emitting laminate includes a second upper surface and a second lower surface, and the second lower surface faces the substrate 10, and a second upper surface is coated on the second upper surface of the light-emitting laminate. A protective layer 13, cutting the light-emitting element 1 with a laser beam from the lower surface of the substrate, and placing the light-emitting element 1 with the first protective layer 13 in a heated acid solution for a period of time, passing the hot acid solution, Remove by-products. In the process of cutting the light-emitting element with a laser beam in this embodiment, a laser beam with a wavelength of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method for preparing luminous element with high luminous efficiency includes utilizing a laser beam to shine a wafer containing semiconductor luminous element for cutting said wafer to be chip then applying wet-acidic etching means to remove off byproduct generated by laser-beam cutting.

Description

technical field [0001] The invention relates to a method for manufacturing a light-emitting element, in particular to a method for manufacturing a light-emitting element with high luminous efficiency. Background technique [0002] The development and application of nitride light-emitting devices is quite extensive and very important. Its applications include sign light sources, electronic product backlight sources, outdoor full-color signage, white light lighting, ultraviolet light, and high-capacity optical drive applications. [0003] In the structure of the nitride light-emitting device, sapphire and silicon carbide (SiC) are the main materials of the substrate. In the process of nitride light-emitting devices, a wafer is used as a substrate and a light-emitting stack is formed thereon, and then the wafer is cut into chips. The traditional cutting method uses a diamond knife as a cutting tool to cut the substrate surface first, and then perform the fracture process. How...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/00
Inventor 徐大正黄忠民谢明勋杨雅兰
Owner EPISTAR CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products