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Method for manufacturing target material for sputtering target

A manufacturing method and sputtering target technology, which are applied in sputtering plating, metal material coating process, ion implantation plating, etc. Larger problems such as preventing bending deformation and cracks, small dependence on oxygen partial pressure, and improving the effect of density unevenness

Inactive Publication Date: 2010-05-12
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] However, as the sputtering device becomes larger, it becomes difficult to control the amount of oxygen introduced, and uneven partial pressure of oxygen occurs. It is easy to cause problems such as deterioration of the quality of liquid crystal display characteristics
[0014] In addition, as the use time of the sputtering target (cumulative time of the sputtering process) becomes longer, the optimum oxygen partial pressure will also change, but at this time, the resistivity of the film will also change as the oxygen partial pressure becomes more dependent. can also become a bigger problem

Method used

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  • Method for manufacturing target material for sputtering target
  • Method for manufacturing target material for sputtering target
  • Method for manufacturing target material for sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0103] Using a roller hearth furnace (number of zones: 16, total length: 7200mm), the degreased ITO sintered body (to In 2 o 3 Add 10 wt% SnO in 2 , 665mm×235mm×15mm, 11.4kg; hereinafter referred to as skimmed body. ) placed on the sintering plate (800mm×300mm×25mm), and sintered under the conditions shown in Table 1 and Table 2 (the temperature distribution is as follows image 3 shown. ), so as to obtain the ITO target. The actual sintering time at this time is the same as the set sintering time, which is 48 hours.

[0104] For the obtained ITO target, the sintered density (g / cm 3 ) and bending deformation (mm), and the presence or absence of cracks was checked visually.

[0105] Calculating the sintered density is calculated by cutting the obtained ITO target into approximately cuboids and performing surface alignment processing, measuring its weight, and then dividing the weight by the volume of the cuboid after surface alignment processing. Among them, the volume o...

Embodiment 2 and 3

[0114] Change the sintering conditions to the conditions shown in Table 1 and Table 3 respectively (the temperature distribution is as follows Figure 4 shown. The temperature profiles of Examples 2 and 3 are the same. ), others are the same as in Example 1, so as to obtain the ITO target. The actual sintering time of Examples 2 and 3 is the same as the set time, which is 16 hours.

[0115] About the obtained ITO target material, similarly to Example 1, the sintered density and bending deformation were calculated|required, and the presence or absence of a crack was evaluated. Next, the theoretical sintered weight for 10 days was obtained.

[0116] Its 10-day theoretical sintering weight, embodiment 2 and 3 are the same, [(7200 / 800) / 16]*240*11.4=1539kg.

[0117] The above results are summarized in Table 1.

Embodiment 4 and 5

[0119] Using a roller hearth furnace (number of zones: 24, total length: 10800mm), while flowing oxygen with an oxygen concentration of 100% into the furnace, the degreased ITO sintered body (to In 2 o 3 Add 10 wt% SnO in 2, 665mm * 235mm * 15mm, 11.4kg) is placed on the state on the sintered plate (800mm * 300mm * 25mm), shown in table 1 and table 4 (embodiment 4) or table 1 and table 5 (embodiment 5) Carry out sintering respectively under the condition (the temperature distribution of embodiment 4 is as Figure 5 Shown, the temperature distribution of embodiment 5 is as Image 6 shown), so as to obtain the ITO target. The actual sintering time of Examples 4 and 5 is the same as the preset sintering time, which is 21.4 hours.

[0120] About the obtained ITO target material, similarly to Example 1, the sintered density and bending deformation were calculated|required, and the presence or absence of a crack was evaluated. Next, the theoretical sintered weight for 10 days w...

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Abstract

A method for manufacturing a target material for a sputtering target by powder metallurgy method is provided with a heating process wherein each body to be baked after formation is sintered from one side. In the heating process, each body to be baked is preferably heated by being transferred over two or more adjacent areas set at different temperatures at the same time. In the heating process, byhaving a difference between temperatures at both ends of one body to be baked while the temperature is increased, the body to be baked can be successively heated and sintered from one side. Therefore,even when manufacturing a matter referred to as a long material or a large target material, since the body to be baked is successively sintered from one side and is successively contracted due to sintering as well, the density of the target material finally obtained can be improved, density nonuniformity can be suppressed and generation of warpage and breakage can be prevented.

Description

technical field [0001] The invention relates to a method of manufacturing a target material for a sputtering target. In particular, it relates to a method for continuously manufacturing the target. Background technique [0002] Conventionally, the sputtering method has been widely known as a method of forming a thin film. [0003] The thin film formed by the sputtering method includes, for example, an oxide (ITO: Indium Tin Oxide) thin film mainly composed of indium oxide and tin oxide. Since this ITO thin film has high electrical conductivity and visible light transmittance properties, it is widely used in various applications such as transparent electrodes for flat panel displays and heat-generating films for preventing dew condensation on window glass. In particular, in the field of flat panel displays represented by liquid crystal display devices, sputtering targets used for ITO thin film production also tend to increase in size as displays have grown significantly in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/64C23C14/34
CPCC04B35/457F27B9/36C04B2235/3284C04B35/453C04B2235/3293F27B9/2407C04B2235/3217C04B2235/6567C04B2235/3286C04B2235/77C04B2235/3294C04B2235/6565C04B2235/6562C04B35/64C23C14/3414C04B35/01C04B2235/656C04B2235/661C23C14/541C23C14/548
Inventor 高井惠一尾野直纪
Owner MITSUI MINING & SMELTING CO LTD
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