Process gas introducing mechanism and plasma processing device
a technology of plasma processing device and introducing mechanism, which is applied in the direction of electric discharge tube, chemical vapor deposition coating, coating, etc., can solve the problems of increasing maintenance time, lowering device operation rate, lowering semiconductor device production yield, etc., and improving the in-surface uniformity of the substrate. , the effect of lowering the in-surface uniformity
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first embodiment
[0054]FIG. 2 is a schematic configuration of a plasma processing apparatus in accordance with a first embodiment of the present invention. A plasma processing apparatus 100 for performing a plasma processing on a substrate to be processed is employed, e.g., in a processing for plasma-etching to remove an impurity layer containing an oxide film such as a native oxide or the like, which is formed on a metal film or a silicon formed on the substrate to be processed.
[0055] The plasma processing apparatus 100 includes a chamber 10 accommodating therein a semiconductor wafer as a substrate to be processed; a wafer supporting portion 20 supporting the semiconductor wafer in the chamber 10; a plasma generation unit 40, installed to cover the chamber 10, for generating a plasma in a processing space S where a plasma processing is performed on the wafer; a gas introducing mechanism 50 for introducing a gas for producing a plasma into the processing space S; and a gas supply unit 60 for suppl...
second embodiment
[0102] In the following, a second embodiment of the present invention will be discussed.
[0103]FIG. 9 is a schematic view of a configuration of a plasma processing apparatus in accordance with the second embodiment of the present invention. The plasma processing apparatus 100′, like as the plasma processing apparatus 100 of the first embodiment, is applied to a process for plasma-etching to remove an impurity layer containing an oxide film, e.g., a native oxide film or the like, formed on a metal film or a silicon formed on a substrate to be processed. Further, the plasma processing apparatus 100′ has a chamber 10′ accommodating therein a semiconductor wafer as a substrate to be processed; a wafer supporting portion 20′ supporting the semiconductor wafer inside the chamber 10′; a plasma generation unit 40′, installed to cover the chamber 10′, for producing a plasma in a processing space S where a plasma processing is performed on a wafer; a gas introducing mechanism 50′ introducing ...
third embodiment
[0139] In the following, a third embodiment of the present invention will be explained. The third embodiment is characterized by a mounting configuration of the semiconductor wafer W as a substrate to be processed.
[0140]FIG. 13 is a schematic cross sectional view showing a mounting configuration of the semiconductor wafer in the plasma processing apparatus in accordance with the third embodiment of the present invention. In the present embodiment, a cap shaped mask plate 170 is provided on a susceptor 21 attachably and detachably to form a wafer supporting portion 20″; and the wafer W is configured to be mounted on a surface of the mask plate 170. Since the mounting configuration of the semiconductor wafer or configurations around the chamber are the same as in the second embodiment, identical reference numerals in FIG. 13 will be used for the corresponding parts having substantially same functions and configurations of FIG. 10 in the second embodiment, and explanations thereof wil...
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