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Photoreduction method for metal complex ions

Inactive Publication Date: 2006-11-23
RIKEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0023] Since the present invention is constituted as mentioned above, it may provide such excellent advantageous effects that strict controllability is not required in the control of its exposure amount, and a size of the metallic structure to be produced may be controlled, besides there is no fear of reducing spatial resolution of the size of the metallic structure to be produced.
[0024] The method of the present invention as described above may be applied to optical memory technology, optical processing technology, UV light molding technology, or optical lithography technology. Accordingly, the present invention may be applied to manufacturing of optical disks, laser processing equipment, optical molding equipment or the like.

Problems solved by technology

In the meantime, a technology wherein a laser beam is beam-irradiated on metal complex ions to photoreduce the metal complex ions thereby to fabricate a metallic structure involves such a problem that a control of the light exposure is difficult.
One of the major causes of a difficulty in controlling the light exposure is in that a metal deposited as a result of photoreduction of the metal complex ions causes the absorption spectrum or the absorption sectional area of the material itself to change, so that characteristic properties of the material which is subjected to laser beam irradiation change momentarily as a result of the laser beam irradiation.
However, it has been extremely difficult usually to execute such strict control of the optical intensity.
Thus, there is such a problem that it is difficult to control a size of the metallic structure produced.
Hence, there is also such a problem that a metallic structure produced becomes extremely large as compared with a size of the intermediate focus point of a laser beam, whereby its spatial resolution decreases.

Method used

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  • Photoreduction method for metal complex ions
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  • Photoreduction method for metal complex ions

Examples

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example 1

[0045]FIG. 2 is an electron micrograph showing the results of fabricating a silver structure in the case where a AgNO3 aqueous solution is used as the sample S, and the sample S is relatively scanned with the laser beam output from the titanium-sapphire laser 12 at a scanning speed 50 μm / s by means of the above-described optical system 10 wherein an illuminating radiation power is 78.5 mW with respect to the sample S.

[0046] On one hand, FIG. 3 is an electron micrograph showing the results of fabricating a silver structure in the case where a mixture prepared by dissolving Coumarin 440 into an ethanol solvent to a AgNO3 aqueous solution is used as the sample S, and the sample S is relatively scanned with the laser beam output from the titanium-sapphire laser 12 at a scanning speed 50 μm / s by means of the above-described optical system 10 wherein a concentration of Coumarin 440 is 0.02 wt % with respect to the ethanol solvent, while an illuminating radiation power is 14.3 mW with res...

example 2

[0049]FIG. 4 is an optical micrograph showing the results of fabricating a gold structure in the case where a HAuCl4 aqueous solution is used as the sample S, and the sample S is relatively scanned with the laser beam output from the titanium-sapphire laser 12 at a scanning speed 50 μm / s by means of the above-described optical system 10 wherein an illuminating radiation power is 142.9 mW with respect to the sample S.

[0050] On one hand, FIG. 5 is an optical micrograph showing the results of fabricating a gold structure in the case where a mixture prepared by dissolving Coumarin 481 into a dimethylformamide solvent to a HAuCl4 aqueous solution is used as the sample S, and the sample S is relatively scanned with the laser beam output from the titanium-sapphire laser 12 at a scanning speed 50 μm / s by means of the above-described optical system 10.

[0051] In this case, a concentration of Coumarin 481 is 0.1 wt % with respect to the dimethylformamide solvent, while an illuminating radiat...

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Abstract

The present invention provides a photoreduction method for metal complex ions by which strict controllability is not required in the control of its exposure amount, and a size of the metallic structure to be produced can be controlled, besides there is no fear of reducing spatial resolution of the size of the metallic structure to be produced. The photoreduction method for metal complex ions wherein a laser beam is beam-irradiated on a metal complex ion dispersion element dispersed in a material to photoreduce the metal complex ions thereby fabricating a metallic structure, includes the steps of adding a predetermined coloring matter to the material in which the metal complex ion dispersion element is dispersed, and beam-irradiating the laser beam to the material to which the predetermined coloring matter has been added.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a photoreduction method for metal complex ions, and more particularly to a photoreduction method for metal complex ions suitable for use in case of fabricating a metallic structure by irradiating a laser beam to photoreduce the metal complex ions. [0003] 2. Description of the Related Art [0004] In recent years, ultramicrofabrication technology such as optical lithography technology, and optical disk manufacturing technology wherein a light is applied is widely utilized, and such technology has been studied in a variety of fields. [0005] For instance, the most widely applied ultramicrofabrication technology at present wherein a light is applied is the above-described optical lithography technology. The optical lithography technology is a backbone technology for manufacturing a variety of electronic devices such as a semiconductor chip. The technology relates to a massive copying techn...

Claims

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Application Information

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IPC IPC(8): C23C18/14
CPCG03F1/72C23C18/14C23C18/143
Inventor TANAKA, TAKUOISHIKAWA, ATSUSHIKAWATA, SATOSHI
Owner RIKEN
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