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Semiconductor device

Inactive Publication Date: 2007-04-12
FUJITSU SEMICON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012] The present invention is made in view of the above-described problems, and an object thereof is to provide a highly reliable semiconductor device and a method of manufacturing the same by inhibiting oxidation of a conductive plug to stabilize contact resistance.

Problems solved by technology

Further, their characteristics easily deteriorate also by etching processing or the like.
As a result, contact resistance increases and causes a problem such that a sufficient voltage will not be applied to the ferroelectric capacitor structure.

Method used

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Examples

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first embodiment

[0149] In this embodiment, a so-called planar type FeRAM will be exemplified, in which conduction of a lower electrode and an upper electrode of a ferroelectric capacitor structure is provided on an upper side of the ferroelectric capacitor structure. Note that for convenience of explanation, the structure of the FeRAM will be described together with a manufacturing method thereof.

[0150]FIG. 2A to FIG. 6B are schematic cross-sectional views showing a structure of an FeRAM according to the first embodiment together with a manufacturing method thereof in the order of steps.

[0151] First, as shown in FIG. 2A, a MOS transistor 20 which functions as a selection transistor is formed on a silicon semiconductor substrate 10.

[0152] Particularly, an element isolation structure 11 is formed on a surface layer of the silicon semiconductor substrate 10 by an STI (Shallow Trench Isolation) method for example to thereby define an element active region.

[0153] Next, an impurity, here B, is ion-im...

modification example 12

[0459] In this example, in the structure of the modification example 11, the glue films are formed as a layered structure of a metal film having conductivity even when oxidized and a conductive protection film which inhibits permeation of hydrogen.

[0460]FIG. 30A to FIG. 32B are schematic cross-sectional views showing a structure of an FeRAM according to modification example 12 of the first embodiment together with a manufacturing method thereof (main steps) in the order of steps.

[0461] First, similarly to the first embodiment, the respective steps of FIG. 2A to FIG. 6A are performed.

[0462] Subsequently, as shown in FIG. 30A, an interlayer insulating film 46 is formed so as to cover the first wires 45.

[0463] Particularly, a silicon oxide film is formed with a film thickness of approximately 700 nm so as to cover the first wires 45, and a plasma TEOS film is formed thereon so that a total film thickness thereof is approximately 1100 nm. Thereafter, the surface thereof is polished ...

second embodiment

[0534] In this embodiment, a so-called stack type FeRAM will be exemplified, in which conduction of the lower electrode of a ferroelectric capacitor structure is provided on a lower side of the ferroelectric capacitor structure and conduction of the upper electrode thereof is provided on an upper side of the ferroelectric capacitor structure. Note that for convenience of explanation, the structure of the FeRAM will be described together with a manufacturing method thereof.

[0535]FIG. 38A to FIG. 42B are schematic cross-sectional views showing a structure of an FeRAM according to the second embodiment together with a manufacturing method thereof in the order of steps.

[0536] First, as shown in FIG. 38A, a MOS transistor 220 which functions as a selection transistor is formed on a silicon semiconductor substrate 210.

[0537] Particularly, an element isolation structure 211 is formed on a surface layer of the silicon semiconductor substrate 210 by an STI (Shallow Trench Isolation) metho...

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Abstract

A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2005-295453, filed on Oct. 7, 2005, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a semiconductor device using a conductive plug for connection to a conductive structure, and in particular, it is mainly directed to a semiconductor device having a ferroelectric capacitor structure formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode. [0004] 2. Description of the Related Art [0005] In recent years, development of ferroelectric memories (FeRAMs: Ferroelectric Random Access Memories) is in progress, which retain information in a ferroelectric capacitor structure utilizing polarization inversion of a ferroelectric. The ferroelectric memories are non-volatile memories which...

Claims

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Application Information

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IPC IPC(8): H01L29/94
CPCH01L21/28518H01L21/76813H01L21/76843H01L21/76846H01L21/76849H01L21/7687H01L27/1159H01L28/60H01L28/75H01L23/5223H01L23/53238H01L23/53266H10B51/30H01L27/105H01L27/04
Inventor KIKUCHI, HIDEAKINAGAI, KOUICHI
Owner FUJITSU SEMICON LTD
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