Semiconductor processing with a remote plasma source for self-cleaning

Abstract

A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.

Description

REFERENCE TO RELATED APPLICATION [0001] The present application is a continuation of U.S. application Ser. No. 10 / 759,925, filed Jan. 16, 2004, which is a continuation of U.S. application Ser. No. 09 / 764,523, filed Jan. 18, 2001, now issued as U.S. Pat. No. 6,736,147, and which claims the priority benefit of U.S. provisional application No. 60 / 176,592, filed Jan. 18, 2000. The entirety of U.S. application Ser. No. 10 / 759,925 is incorporated herein by reference.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] This invention relates to a CVD (chemical vapor deposition) device equipped with a self-cleaning device. In particular, the invention relates to a device that cleans the inside of a deposition chamber using remotely generated active species. [0004] 2. Description of the Related Art [0005] CVD devices have been conventionally used to form insulation films such as silicon oxide, silicon nitride, amorphous carbon or polymer containing benzene ring, conductor film...

AI Technical Summary

Benefits of technology

The present invention provides a remote plasma discharge chamber that is resistant to damage and can clean the inside of a reaction chamber without using ion bombardment. The device includes a support for the object being processed and a gas-emitting plate that supplies reaction gas to the object. The device also includes a valve that maintains the pressure drop across it low, reducing the risk of damage and improving cleaning efficiency. The use of a specific frequency for the radio-frequency oscillating output allows for the use of sapphire or quartz, which are commonly used in conventional microwave output, and reduces the risk of damage and consumption of active species. The use of materials inert to fluorine active species for the internal surfaces of the piping and valve reduces the occurrence of fluorine active species or fluoride gas being released after cleaning is completed. The device also includes a support for the object being processed and a gas-emitting plate that supplies reaction gas to the object. The use of rectilinear piping with a large internal diameter and a valve that does not restrict flow between the reaction chamber and the remote plasma discharge chamber reduces collisions with the piping surface and structure within the valve, allowing for high-speed cleaning at over 2 micron / min. The device also includes a support for the object being processed and a gas-emitting plate that supplies reaction gas to the object.

Problems solved by technology

This causes impurity contamination that leads to defects in manufactured semiconductor circuits.

As a result, the surface of electrodes is damaged; a surface layer comes off to cause impurity contamination.

It becomes necessary to replace damaged parts frequently, which increases operation cost.

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