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Method for manufacturing image sensor

a manufacturing method and image sensor technology, applied in the direction of electrical equipment, semiconductor devices, radio frequency control devices, etc., can solve the problems of microlense gap and image defect, and achieve the effect of improving yield and reliability

Inactive Publication Date: 2008-12-25
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007]According to an embodiment, by omitting the polymer material of the related art microlens, an image sensor can be manufactured with improved yield and reliability.
[0008]In addition, an embodiment of the subject method provides an image sensor capable of minimizing a gap between microlenses.

Problems solved by technology

However, an amount of the photoresist lost when reflowing the photoresist may be large, causing a gap between the microlenses.
These particles can damage the microlens or are attached to the microlens to cause an image defect.

Method used

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Examples

Experimental program
Comparison scheme
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first embodiment

[0022]FIGS. 2 to 6 illustrate a method for manufacturing an image sensor according to a

[0023]Referring to FIG. 2, a protective layer 120 can be formed on a substrate 110. The substrate 110 can further be provided with a photodiode (not shown) or other structures (not shown).

[0024]The protective layer 120 is used to protect a device from moisture and scratch. In certain embodiments, the protective layer 120 can be formed of, for example, an oxide film or a nitride film.

[0025]A color filter layer 130 can be formed on the protective layer 130. In one embodiment, the color filter layer can be formed by applying a dyeable resist to the substrate and subjecting the dyeable resist to exposure and development processes. The color filter layer 130 can include red, green, and blue color filter layers filtering light corresponding to a wavelength band.

[0026]A planarization layer (not shown) can be formed on the color filter layer 130 for a control of the focal length and an assurance of a plan...

second embodiment

[0044]FIGS. 7 to 11 illustrate a method for manufacturing an image sensor according to a

[0045]The image sensor according to second embodiment can include many of the same features as the image sensor according to the first embodiment. For example, the method according to the second embodiment can include forming a protective layer 120 on a substrate 110, forming a color filter layer 130 on the protective layer 120, and forming an oxide film 142 on the color filter layer 130.

[0046]Referring to FIG. 7, a second photoresist pattern 220 can be formed on the oxide film 142.

[0047]The second photoresist pattern 220 can expose outer portions of a region of the oxide film 142 from which a microlens will be formed. That is, the second photoresist pattern 220 can be formed covering regions of the oxide film 142 corresponding to a central portion of a microlens to be formed from the oxide film 142.

[0048]In one embodiment, the second photoresist pattern 220 can expose a region of the oxide film ...

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Abstract

Methods of forming a microlens for an image sensor are provided. In one embodiment, the microlens can be oxide film microlens fabricated by forming an oxide film on a substrate; forming a first photoresist pattern on the oxide film; performing a plasma processing with respect to the oxide film using the first photoresist pattern as a mask; removing the first photoresist pattern; and performing an isotropic etching of the plasma processed oxide film. In another embodiment, the oxide film microlens can be fabricated by forming an oxide film on a substrate; forming a first photoresist pattern on the oxide film; implanting ions into the oxide film using the first photoresist pattern as a mask; removing the first photoresist pattern; and performing an isotropic etching of the ion implanted oxide film. Convex shaped microlens can be provided as a result of the etching selectivity to the oxide film.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims the benefit under 35 U.S.C. §119 of Korean Patent Application No. 10-2007-0062013, filed Jun. 25, 2007, which is hereby incorporated by reference in its entirety.BACKGROUND[0002]A method for forming a microlens during a manufacturing process of an image sensor generally uses a method of performing a micro photo process using a special photoresist for a microlens and then reflowing the special photoresist into convex shaped microlenses.[0003]However, an amount of the photoresist lost when reflowing the photoresist may be large, causing a gap between the microlenses. The gap can cause an amount of light incident on the photodiode to be reduced by failing to direct the light to the photodiode.[0004]Also, with the related art special photoresist for a microlens, the microlens of an organic material can create particles during post-processes, such as wafer sawing and bump formation in a chip mounting process. Thes...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23F1/02
CPCH01L27/14627H01L27/14685H01L27/146
Inventor SHIN, CHONG HOON
Owner DONGBU HITEK CO LTD