Thin film transistor, display device having thin film transistor, and method for manufacturing the same
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Embodiment 1
[0375]A gate insulating film was formed over a glass substrate; flushing treatment was performed using phosphine, which is a gas including an impurity element which serves as a donor; then, a microcrystalline silicon film was formed. FIG. 39 shows a result of measuring peak concentrations of phosphorus by SIMS.
[0376]As the gate insulating film, a silicon oxynitride film with a thickness of 100 nm was formed over a glass substrate with a thickness of 0.7 mm by a plasma CVD method under the following condition: the RF power source frequency was 13.56 MHz; the power of the RF power source was 50 W; the film formation temperature was 280° C.; the flow rates of silane gas and dinitrogen monoxide were 30 sccm and 1200 sccm, respectively; and the pressure was 40 Pa.
[0377]Subsequently, gas including phosphine was introduced to a reaction chamber to perform flushing treatment. The conditions at this time were as follows:
[0378](Condition 1)
[0379]flow rate of 0.1% PH3 (diluted with...
Example
Embodiment 2
[0393]A gate insulating film including phosphorus, which is an impurity element which serves as a donor, was formed over a glass substrate, and then a microcrystalline silicon film was formed. FIG. 40 shows a result of measuring peak concentrations of phosphorus by SIMS. Here, a silicon oxynitride film was formed as a first gate insulating film so as to include phosphorus, and a silicon oxynitride film was formed as a second gate insulating film.
[0394]As the first gate insulating film, a silicon oxynitride film including phosphorus with a thickness of 10 nm was formed over a glass substrate with a thickness of 0.7 mm by a plasma CVD method under the following condition: the RF power source frequency was 13.56 MHz; the power of the RF power source was 50 W; the film formation temperature was 280° C.; and the pressure was 40 Pa. The conditions of the flow rates of source gases were as follows:
[0395](Condition 4)
[0396]flow rate of SiH4: 30 sccm; flow rate of N2O: 1200 sccm;...
Example
Embodiment 3
[0409]After precoating the inside of a reaction chamber of a plasma CVD apparatus with a protective film, a glass substrate was carried in the reaction chamber, and a first gate insulating film, a second gate insulating film, a microcrystalline silicon film, and an amorphous silicon film for functioning as a buffer layer were formed. FIG. 41 shows a result of measuring peak concentrations of phosphorus by SIMS. Here, a silicon nitride film was formed as the first gate insulating film, and a silicon oxynitride film was formed as the second gate insulating film.
[0410]The inside of the reaction chamber was precoated with the protective film. The condition at this time was as follows:
[0411](Condition 6)
[0412]An amorphous silicon film including phosphorus with a thickness of 50 nm was formed as the protective film on an inner wall of a reaction chamber under the following condition: the RF power source frequency was 13.56 MHz; the power of the RF power source was 370 W; and t...
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