Field effect transistor manufacturing method

a manufacturing method and field effect technology, applied in the direction of basic electric elements, electrical equipment, semiconductor devices, etc., can solve the problems of difficult direct formation on resin substrates, which usually have a low thermal resistance, and achieve the effect of improving thermal insulation performance and reducing manufacturing costs

Inactive Publication Date: 2010-10-21
CANON KK +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the manufacture of such an above-described transistor which uses a silicon thin-film requires a relatively high temperature thermal process, whereby direct formation onto a resin substrate, which usually has a low thermal resistance, is difficult.

Method used

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  • Field effect transistor manufacturing method
  • Field effect transistor manufacturing method
  • Field effect transistor manufacturing method

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Experimental program
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first embodiment

o Post-Deposition

[0074]1-A The method for manufacturing a field effect transistor according to the present embodiment is characterized by, subsequent to preparing a substrate yet prior to forming on the substrate an active layer comprising an amorphous oxide, carrying out any of the following steps:

[0075]irradiating ultraviolet rays onto the substrate surface in an ozone atmosphere; or

[0076]irradiating plasma onto the substrate surface; or

[0077]cleaning the substrate surface with a chemical solution containing hydrogen peroxide; or

[0078]coating with a film comprising silicon and oxygen.

[0079]As a result of the above surface treatment process of the substrate, contaminants adhered to the substrate surface are removed, whereby the substrate surface is cleaned.

[0080]As a result of the above process, performance deterioration due to contaminants diffusing into the film constituting a TFT (thin-film transistor), or other such field effect transistor, can be reduced.

[0081]Further, as a re...

example 1-1

[0341]First, a PET substrate is placed in the chamber of a UV / O3 surface treatment apparatus, and the substrate surface is irradiated with ultraviolet rays.

[0342]The chamber that this apparatus has conducts deposition in an oxygen-containing atmosphere under atmospheric pressure. Ozone forms in the chamber from the ultraviolet ray irradiation. Contaminants on the substrate surface are removed by the ozone and the ultraviolet rays, whereby a clean surface can be obtained.

[0343]On a substrate which had undergone surface treatment using this method, an In—Ga—Zn—O system amorphous oxide semiconductor thin-film is deposited by pulsed laser deposition employing a KrF excimer laser with a polycrystalline sintered body having an InGaO3(ZnO)4 composition serving as the target.

[0344]The deposition conditions are appropriately set within the above-mentioned range.

[0345]Next, the top-gate type MISFET device illustrated in FIG. 5 will be fabricated. Specifically, the device is fabricated in the ...

example 1-2

[0348]First, a glass substrate (1737, manufactured by Corning Incorporated) is placed in the chamber of a parallel-plate atmospheric-pressure plasma apparatus, and low-energy plasma is irradiated onto the substrate surface.

[0349]This apparatus removes contaminants on the substrate surface by irradiating low-energy plasma onto the substrate surface, whereby the state of the substrate top surface can be made to change.

[0350]On a substrate which had undergone surface treatment using this method, an In—Ga—Zn—O system amorphous oxide semiconductor thin-film is deposited by pulsed laser deposition employing a KrF excimer laser with a polycrystalline sintered body having an InGaO3(ZnO)4 composition serving as the target.

[0351]It can be confirmed from a peeling test carried out on the obtained amorphous oxide film that the adhesion between the substrate and the amorphous oxide film is extremely good.

[0352]An amorphous oxide obtained in this manner can be used to fabricate a transistor such ...

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Abstract

Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a method for manufacturing a field effect transistor.[0003]2. Related Background Art[0004]In recent years, flat image display devices (Flat Panel Display: FPD) have been developed for practical use as a result of the progress made in technologies such as liquid crystals and electroluminescence (EL). These FPDs are driven by the active matrix circuitry of field effect thin-film transistors (Thin Film Transistor: TFT) which use an amorphous silicon thin-film or a polycrystalline thin-film on a glass substrate in the active layer.[0005]Meanwhile, testing is being carried out into the use of resin substrates which are light-weight and flexible in place of a glass substrate in order to make such FPDs even thinner, lighter and have better their shatter resistance.[0006]However, the manufacture of such an above-described transistor which uses a silicon thin-film requires a relatively high tempe...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/36
CPCH01L29/78618H01L29/66969H01L29/78693
Inventor YABUTA, HISATOSANO, MASAFUMIIWASAKI, TATSUYAHOSONO, HIDEOKAMIYA, TOSHIONOMURA, KENJI
Owner CANON KK
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